Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Hajime Tsukahara

Yukihiko Watanabe

Takeshi Kondo

Kentarou Okumura

Hidekazu Odake

Hideki Naruoka

A silicon carbide semiconductor device includes: a silicon carbide semiconductor substrate that has a front surface and a rear surface; and a plurality of ohmic electrodes that are in ohmic contact with a surface of silicon carbide on at least one of the front surface and the rear surface of the silicon carbide semiconductor substrate. The plurality of ohmic electrodes are scattered on the surface of the silicon carbide to provide a concavity and convexity. The concavity and convexity has a height due to the ohmic electrodes less than 1.0 &#x3bc;m.

Silicon carbide semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor chip, and a grinding-processed layer laminated on one surface of the semiconductor chip. Further, the semiconductor device includes a sealing resin that seals the semiconductor chip and the grinding-processed layer; and a metal remaining-thickness checking portion provided adjacent to the grinding-processed layer, sealed by the sealing resin, and having a inclined plane that is inclined with respect to a laminating direction of the grinding-processed layer.

Semiconductor device and grinding method of semiconductor device

Growing community of inventors

Toyota, Japan

Hajime Tsukahara