National Institute of Advanced Industrial Science and Technology

Rohm Co., Ltd.

Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Hajime Shibata

Shigeru Niki

Shogo Ishizuka

Koji Matsubara

Akimasa Yamada

Takuji Maekawa

Yutaka Uchida

Keiichiro Sakurai

Kawakatsu Yamada

Yunosuke Makita

Saburoh Satoh

Hitoshi Tampo

The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.

Photoelectric conversion device and method for manufacturing photoelectric conversion device

An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type ZnMgO (barrier layer)/ZnMgO (active layer)/p-type ZnMgO (barrier layer), and light is emitted from the active layer. Electrodesare respectively formed on barrier layers. By applying a voltage between the two electrodes, light is emitted from ZnO (active layer). Here, there are a relationship of x&#x3c;y and a relationship of x&#x3c;z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency. For this reason, the optical semiconductor device is excellent as a light-emitting device.

Semiconductor device

A laser-beam annealing apparatus that provides reliable, continuous control of the intensity of the laser beam used to perform the annealing process.

Laser-beam annealing apparatus

Growing community of inventors

Tsukuba, Japan

Hajime Shibata