Nec Corporation

Zenyaku Kogyo Kabushiki Kaisha

Hajime Ono

Masayuki Takahashi

Shinichi Yaguchi

Toshihiko Komatsu

Yoshio Tsuchida

Masanobu Kato

Hideshi Kobayashi

Yasuhiro Izumisawa

Naohito Ogose

Seiichi Fukuda

Tsutomu Nakagane

A semiconductor device has a p-n-p transistor structure having a collector implemented by a p.sup.- -substrate, a base formed as an n-diffused region in the surface region of the substrate, and an emitter formed as a p.sup.+ -diffused region in the first n-diffused layer. The p.sup.- -substrate and the n-base are maintained at a ground level, while the p.sup.+ -collector is maintained at a positive potential for biasing the p-n junction formed between the emitter and the base. The bias potential allows the p-n-p transistor structure to operate in its saturation region to activate the base region to define an enlarged carrier-incresed zone. An analog input pad is located within the carrier-increased zone and protected from a noise propagated from a digital circuit section located outside the carrier-increased zone.

Low noise propagation semiconductor device

S-triazine derivative and remedy for estrogen-dependent disease

Growing community of inventors

Tokyo, Japan

Hajime Ono