Seiko Epson Corporation

Hajime Onishi

Tsuyoshi Kaneko

Tetsuo Nishida

Masamitsu Mochizuki

Eiji Okamoto

Masaya Ishida

Tomoko Koyama

Yutaka Yamazaki

Yasutaka Matsumoto

Kentaro Yamada

Taisuke Nakashima

A flow passage forming member includes flow passage forming member main bodiesandthat are formed of a resin material and define at least a part of a flow passage, a metal protective filmthat is provided on a surface of the flow passage forming member main bodyand a surface of the flow passage forming member main bodydefining at least the flow passage and is formed of a metal material, and a protective filmthat is laminated on the metal protective filmand contains an oxide or a nitride of at least on element selected from the group consisting of tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (Nb), vanadium (V), hafnium (Hf), silicon (Si), aluminum (Al), tungsten (W), and yttrium (Y).

Flow passage forming member, liquid ejecting head, liquid ejecting apparatus, method of producing flow passage forming member, and method of producing liquid ejecting head

A shaping stage has a shaping face where a shaping material is deposited and is used in a three-dimensional shaping apparatus by being subjected to temperature control. The shaping stage includes a first member having a plurality of recess portions or penetration portions and a first shaping face portion that is present in peripheries of the recess portions or the penetration portions and that is included in the shaping face, and a second member that is placed inside the recess portions or the penetration portions, that has a second shaping face portion included in the shaping face, and that has a thermal expansion coefficient different from the first member.

Shaping stage, three-dimensional shaping apparatus, and control method of three-dimensional shaping apparatus

A manufacturing method for a three-dimensional formed object for manufacturing the three-dimensional formed object by stacking layers includes supplying a first forming material of the three-dimensional formed object to a contour region of the three-dimensional formed object in the layers, applying energy to the first forming material supplied to the contour region to solidify the first forming material, supplying a second forming material to a region corresponding to the three-dimensional formed object, the region being a contact region in contact with the contour region, and applying energy to the second forming material supplied to the contact region to solidify the second forming material.

Manufacturing method of three-dimensional formed object by forming contour region and object

A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Optical element, optical module and method for manufacturing the same

To provide a light-receiving element that is capable of high-speed operation and includes an optical element with controlled setting position, shape and size, a manufacturing method for the light-receiving element, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a base member provided over a light-receiving surface, and an optical element provided on a top surface of the base member.

Light-receiving element, manufacturing method for the same, optical module, and optical transmitting device

A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, an emission section formed above the first face, and a rectification section formed above the second face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type, and a second semiconductor layer of the first conductivity type formed above the first semiconductor layer, the first semiconductor layer of the emission section and the first semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.

Surface-emitting type device and its manufacturing method

To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrateand a plurality of surface-emitting type elementsformed above the substrate. Each of the surface-emitting type elementsincludes a light emitting element section, first and second electrodesfor driving the light emitting element section, and a rectification element section. The rectification element sectionis connected in parallel between the first and second electrodes, and has a rectification action in a reverse direction with respect to the light emitting element section. The plurality of surface-emitting type elementsare connected in series in a direction in which forward directions of the respective light emitting element sectionscoincide with one another.

Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers

A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second face and has a plane index equal to the plane index of the first face, an emission section formed above the first face, and a rectification section formed above each of the second face and the third face, wherein the emission section includes a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed above the active layer, the rectification section includes a first semiconductor layer of the second conductivity type formed above the second face, and a second semiconductor layer of the first conductivity type formed continuously with the first semiconductor layer above the third face, at least a portion of the first semiconductor layer of the emission section, the first semiconductor layer of the rectification section, and the second semiconductor layer of the rectification section are formed by a common process and include the same impurity, the emission section and the rectification section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.

To provide a light-receiving element capable of high-speed operation including an optical member whose setting position, shape and size are advantageously controlled and its manufacturing method, and an optical module and an optical transmitting device including the light-receiving element, a light-receiving element includes a columnar part provided in a substrate. A top surface of the columnar part includes a receiving surface, and an optical member is provided on the top surface of the columnar part. The columnar part includes a first conductive type layer, a light absorbing layer, and a second conductive type layer. The light absorbing layer is formed between the first conductive type layer and the second conductive type layer.

Light-receiving element and manufacturing method of the same, optical module and optical transmitting device

A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.

Photodetectors, optical modules, and optical transmission devices

To provide a optical element array in which a plurality of optical elements can be monolithically integrated, and each of the optical elements can be independently driven. A optical element array in accordance with the present invention includes a plurality of optical elements having light emitting sections formed above a substrate and photodetecting sections formed above the light emitting sections; and an element isolation section that is formed between the optical elements, for electrically isolating each of the optical element from the other, wherein the substrate is dielectric or semi-dielectric, the light emitting section includes a first semiconductor layer, an active layer, and a second semiconductor layer, the photodetecting section includes a first contact layer, a photoabsorption layer, and a second contact layer, the optical element has a first electrode that is electrically connected to the first semiconductor layer, and a second electrode that is electrically connected to the second semiconductor layer, the first electrodes are electrically isolated one from the other between the optical elements, and the second electrodes define a common electrode for driving the light emitting section and the photodetecting section.

Growing community of inventors

Chino, Japan

Hajime Onishi