Kabushiki Kaisha Toshiba

Hajime Okuda

Masayuki Ishikawa

Hideo Shiozawa

Hideto Furuyama

Kazuhiko Itaya

Nobuo Suzuki

Yuzo Hirayama

Genichi Hatakoshi

Yukio Watanabe

Masaru Nakamura

Motoyasu Morinaga

Yasuo Ohba

Yoshihiro Kokubun

Mariko Suzuki

Nawoto Motegi

Yutaka Uematsu

Shigeya Naritsuka

Hideto Sugawara

Yukie Nishikawa

Hirokazu Tanaka

Satoshi Komoto

Disclosed is a semiconductor apparatus including: a first molded resin portion; a plate-shaped lead frame closely attached to the first molded resin portion; a second molded resin portion attached facing the first molded resin portion and the lead frame; and one or more elements attached on the lead frame on a side which faces the second molded resin portion, the one or more elements including a semiconductor element, wherein any part of at least one of the elements does not exist in a region composed of an aggregation of line segments, each line segment being formed by any two points on an outer periphery of the plate-shaped lead frame outside the first and second molded resin portions and all of the line segments being contained inside a board of the lead frame.

Semiconductor apparatus configured with a lead frame having sufficient strenght to protect against external forces

An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

Manufacturing method of semiconductor laser with non-absorbing mirror

In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:

Semiconductor laser device

A semiconductor laser device using double heterostructure comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an active layer, the active layer having an impurity concentration not greater than 5.times.10.sup.16 cm.sup.-3. The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In.sub.q (Ga.sub.1-z Al.sub.z).sub.q P (0.ltoreq.q.ltoreq.1, 0.ltoreq.z.ltoreq.1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.

A semiconductor laser device comprises a substrate having an n-type buffer layer, a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region provided above the buffer layer, an active region consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions integrally formed with the low resistive region and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole is provided between the buffer layer and low resistive region on the side of buried portion. The auxiliary element includes a high resistive regions integrally formed with the low resistant region and positioned on the sides of low resistive region.

A semiconductor laser device comprises a semiconductor mesa portion formed above semiconductor substrate by a predetermined interval, an active region, formed between the mesa portion and semiconductor substrate and consisting of a semiconductor having a forbidden band width smaller than those of the mesa portion and semiconductor substrate, for contributing to light emission, a pair of buried portions formed at both sides in a widthwise direction of and in contact with the active region and consisting of a semiconductor having a forbidden band width larger than that of the active region, a total width of the buried portions and the active region being smaller than that of the mesa portion, thereby forming a gap at a side of each of the buried portions between the mesa portion and semiconductor substrate to electrically insulate the mesa portion and semiconductor substrate, and supporting portions formed integrally with the mesa portion so as to support the mesa portion with respect to the substrate in association with the active region and the buried portions.

Semiconductor laser device which has a double-hetero structure having an

Semicondutor laser device

Growing community of inventors

Yokohama, Japan

Hajime Okuda