Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Mitsubishi Heavy Industries Limited

Kyocera Corporation

Ryoen Technical Service Corp.

Hajime Nagano

Ichiro Mizushima

Takashi Yamada

Tsutomu Sato

Shinichi Nitta

Hisato Oyamatsu

Fumiki Aiso

Yuso Udo

Atsushi Fukumoto

Shintaro Honjo

Kazuo Ishida

Masahiro Harada

Katsujiro Tanzawa

Takeshi Hamamoto

Susumu Okino

Kiyotaka Miyano

Hiroaki Yamada

Osamu Fujii

Yoshihiro Minami

Makoto Susaki

Katsuya Okumura

Yukihiro Ushiku

Soichi Nadahara

Masao Iwase

Hiroshi Matsushita

Tsunetoshi Arikado

Norihiko Tsuchiya

Junji Sugamoto

Moriya Miyashita

Yoshiaki Fukuzumi

Yoshio Ozawa

Takashi Suzuki

Yusuke Kohyama

Tatsuya Ohguro

Shinji Miyano

Yoshinori Koyama

Kozo Iida

Masahiro Hirano

Ryota Fujitsuka

Hisataka Meguro

Katsuhiko Yokohama

Kenji Kojima

Takuo Ohashi

Takeo Furuhata

Kazumi Inoh

Atsushi Azuma

Hiroshi Suzumura

Junya Fujita

Kensei Takahashi

Tomonari Shioda

Tomohisa Iino

Motoki Fujii

Takayuki Matsui

Tomoharu Hashiguchi

Akira Johana

Tatsuro Nishimoto

Mitsugi Suehiro

Makoto Suzaki

Takeshi Shundo

According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.

Vaporization system

According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Semiconductor device

According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Semiconductor device and method for manufacturing semiconductor device

According to some embodiments, a semiconductor manufacturing apparatus includes a first boat and a second boat, each of the first boat and the second boat having two support rings respectively provided at a top end and a bottom end thereof and a plurality of pillars provided between the top support ring and bottom support ring and spaced apart from one another. The pillar is provided with support protrusions on which a semiconductor substrate can be placed, and vertical positions of upper surfaces of the support protrusions of the second boat are lower than positions of upper surfaces of the support protrusions of the first boat. The semiconductor apparatus is configured to lift the second boat such that the positions of the upper surfaces of the support protrusions provided in the second boat are positioned above the positions of the upper surfaces of the support protrusions provided in the first boat.

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.

A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.

According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.

Semiconductor memory device having voids between word lines and a source line

In one embodiment, a semiconductor manufacturing apparatus includes an accommodation module configured to accommodate a substrate. The apparatus further includes a first flow channel including first openings configured to emit a first gas into the accommodation module. The apparatus further includes a second flow channel including second openings configured to emit the first gas into the accommodation module, a number or a size of the second openings being different from a number or a size of the first openings. The apparatus further includes a controller configured to control supplying of the first gas to the first and second flow channels such that the first gas is emitted from the first openings at a first flow velocity and the first gas is emitted from the second openings at a second flow velocity different from the first flow velocity.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

In one embodiment, a semiconductor manufacturing apparatus includes a belt supporting module including a first portion that is provided around a first axis, a second portion that is provided around a second axis different from the first axis, a third portion connecting the first and second portions, and a fourth portion connecting the first and second portions and positioned below the third portion. The apparatus further includes a belt provided on the belt supporting module, and configured to rotate around the first axis in a first direction and rotate around the second axis in a second direction reverse to the first direction. The apparatus further includes a wafer supporting module provided on the belt and configured to support a wafer. The apparatus further includes raw material feeding heads provided above the belt and configured to feed a raw material of a film to be formed on the wafer.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

To provide a security technique (a base station and a mobile terminal) for easily guarding a building such as a house for an average family or a small office at a low price by using a cellular phone terminal and a small base station (femtocell). A base station (FCL) of a mobile communication system placed in a building includes a communication unit () for communicating with the mobile communication system via a communication line; an obtaining unit () for obtaining an opened state of a fitting set to an opening of the building from the fitting or a switch placed near the fitting for detecting the opened state of the fitting; a registering unit () for registering information on a mobile terminal that uses the base station; a processing unit () for processing location registration of the mobile terminal; and a control unit () for controlling the communication unit to transmit a predetermined message to a predetermined addressee via the communication line if information received from the mobile terminal does not match the information registered in the registering unit when the location registration of the mobile terminal is performed by the processing unit after the opened state of the fitting is obtained.

Base station and mobile terminal

A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory cell transistor and a second gate electrode. The first gate electrode includes a floating gate electrode film, a first interelectrode insulating film and a control gate electrode film. The floating gate electrode film has a polycrystalline silicon film and the control gate electrode film having a silicide film. The second gate electrode includes a lower electrode film, a second interelectrode insulating film and an upper electrode film. The second interelectrode insulating film includes an opening. The lower electrode film includes a void below the opening of the second interelectrode insulating film. The upper electrode film includes a silicide film. The lower electrode film includes a polycrystalline silicon film and a silicide film which is located between the opening and the void.

Nonvolatile semiconductor memory device and method of fabricating the same

In a semiconductor device, each of a plurality of floating gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of control gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of inter-electrode insulating films includes a first air gap formed in a first portion corresponding to the intermediate portion of each floating gate electrode and a second air gap formed in a second portion corresponding to the intermediate portion of each control gate electrode.

Semiconductor memory device having multiple air gaps in interelectrode insulating film

A nonvolatile semiconductor memory including a semiconductor substrate having an upper surface; a plurality of memory cell transistors formed in the semiconductor substrate, each memory cell transistor including a gate electrode having a gate insulating layer on the upper surface of the semiconductor substrate, a floating gate electrode layer on the gate insulating layer, an inter-gate insulating layer on the floating gate electrode layer, and a control gate electrode layer on the inter-gate insulating layer; a first oxide-based insulating film formed above the upper surface of the semiconductor substrate between the gate electrodes, and including an upper surface as high or higher than that of the floating gate electrode layer but lower than that of the control gate electrode layer; a nitride-based insulating film containing boron formed on the first oxide-based insulating film and the control gate layer; and a second oxide-based insulating film formed on the nitride-based insulating film.

Nonvolatile semiconductor memory device and method of manufacturing the same

A COS treatment apparatus for a gasified gas includes an Oremoval catalyst and a COS conversion catalyst located on the downstream side of a gasified gas flow with respect to the Oremoval catalyst. Also, a COS treatment apparatus includes a TiOcatalyst that carries CrOor NiO. Further, a COS treatment method includes a first step in which Ois removed by the reaction with HS and CO, and a second step in which COS is converted to HS.

Apparatus for treating COS for gas produced by gasification and method for treating COS

In a method for manufacturing a non-volatile semiconductor device according to this invention, steps are provided for forming a plurality of first semiconductor portions over a substrate; selectively growing a plurality of second semiconductor portions in contacting with said plurality of first semiconductor portions respectively; partially removing said plurality of second semiconductor portions to prepare a plurality of floating gates with substantially flat surfaces; forming an insulating layer over said plurality of floating gates; and forming a control gate over said insulating layer.

Method of manufacturing non-volatile semiconductor memory

Growing community of inventors

Yokohama, Japan

Hajime Nagano