Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Hajime Kurata

Kunihiko Gotoh

Kenzo Iizuka

Tsuyoshi Sugisaki

A semiconductor device manufacturing method includes: forming a first active region and a second active region in a semiconductor substrate; forming a first gate insulating film on the first active region and a second gate insulating film thinner than the first gate insulating film on the second active region by using material containing silicon oxide; forming first and second gate electrodes on the first and second gate insulating films respectively; forming an insulating film on the semiconductor substrate, and anisotropically etching the insulating film to leave first side wall insulating films on side walls of the first and second gate electrodes; removing the first side wall insulating film on the first gate electrode; and after removing the first side wall insulating film on the first gate electrode, thermally treating in an oxidizing atmosphere the semiconductor substrate to form a second side wall insulating film on the first gate electrode.

Semiconductor device manufacture method and semiconductor device

A semiconductor device includes a capacitor element including a first comb-shaped interconnection formed over a substrate and including a first comb tooth, a second comb-shaped interconnection formed over the substrate and including a second comb tooth opposed to the first comb tooth, and a first electrode and a second electrode opposed to each other with opposed surfaces of the first electrode and the second electrode intersecting a longitudinal direction of the first comb tooth and the second comb tooth, a first dielectric layer formed between the first electrode and the second electrode, the first electrode being connected to the first comb tooth, and the second electrode being connected to the second comb tooth.

Capacitor element and semiconductor device

A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating film in a region, forming a gate electrode over the gate insulating film and a drain electrode on the region, implanting first impurities into the substrate using the gate electrode and the drain electrode as a mask, forming an insulating film to fill the space between the gate electrode and the drain electrode, and implanting second impurities into the substrate to form a source region using the gate electrode, the drain electrode and the insulating film as a mask.

Method of manufacturing a semiconductor device and a semiconductor device

A reference voltage generator circuit is provided which is capable of stable generation of a reference voltage. A differential amplifier circuit has a non-inverting input terminal input with the voltage Vbegenerated by a PNP transistor Qand an inverting input terminal input with an output signal thereof. A differential amplifier circuit has a non-inverting input terminal input with the voltage Vbegenerated by a PNP transistor Qand an inverting input terminal input with the output signal of the differential amplifier circuit through a resistor Rand also input with an output signal thereof through a resistor R, to generate a reference voltage Vref.

Reference voltage generator circuit

A semiconductor device includes a T-shaped gate on a gate insulation film, wherein the T-shaped gate includes a lower polycrystal layer containing Si and Ge and an upper polycrystal layer of polysilicon.

Growing community of inventors

Kawasaki, Japan

Hajime Kurata