Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Hajime Koyama

Koichi Fukuda

Kazuyuki Nakamura

Takanori Nakamura

Yukio Komatsu

Yoshihiro Ishikawa

Naritoshi Nakagawa

Hideyuki Kawajiri

Satoru Kuboya

Takuya Tomioka

Toshimasa Mukai

Yukito Yada

In a guide vane according to an embodiment of the invention, where in a section perpendicular to a guide vane rotation axis, a curvature of a contour line forming a runner side vane surface of the guide vane is referred to as a positive curvature when the contour line is formed to be convex, while the curvature of the contour line is referred to as a negative curvature when the contour line is formed to be concave, a negative curvature portion where the curvature of the contour line becomes negative is provided on the runner side vane surface. The negative curvature portion is formed from an upper end portion to a lower end portion of the runner side vane surface.

Guide vane and fluid machine

A hydraulic turbine according to an embodiment includes a turbine body, a running water surface provided in the turbine body, the running water surface defining a channel for water, and a coating layer provided on the running water surface, the coating layer being formed by water-repellent paint or hydrophilic paint.

Hydraulic turbine and pipe

A semiconductor device which includes fuses for relieving defective areas in the semiconductor device is described. There is provided a semiconductor device including a semiconductor substrate having a circuit element, an insulating layer provided on the semiconductor substrate, a fuse element formed in the insulating layer, the fuse element including at least two fuse units connected in series, each of the fuse units having a resistor and a fuse connected in parallel, the fuse disposed above the resistor.

Semiconductor device having fuses

A semiconductor device is disclosed, which comprises a semiconductor substrate with which a circuit element is provided, an insulating layer which is provided on the semiconductor substrate and has a concave portion, a first conductive line layer which is provided at the concave portion in the insulating layer and has a first thickness, and a second conductive line layer which is provided at the concave portion in the insulating layer so as to be formed apart in a horizontal direction from the first conductive line layer and has a second thickness which is smaller than the first thickness.

Semiconductor device including fuses for relieving defective areas

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Yokohama, Japan

Hajime Koyama