Semiconductor Energy Laboratory Co., Ltd.

Other

Hajime Kimura

Shunpei Yamazaki

Atsushi Umezaki

Jun Koyama

Hideki Uochi

Yu Yamazaki

Yoshifumi Tanada

Yasunori Yoshida

Yasuko Watanabe

Hideaki Kuwabara

Atsushi Miyaguchi

Hideaki Shishido

Yutaka Shionoiri

Yukie Suzuki

Yoshiyuki Kurokawa

Keisuke Miyagawa

Kiyoshi Kato

Mitsuaki Osame

Tatsunori Inoue

Aya Anzai

Yasuhiro Jinbo

Masato Yonezawa

Satoshi Seo

Takayuki Ikeda

Tatsuya Onuki

Ryota Fukumoto

Hitoshi Kunitake

Masafumi Morisue

Kengo Akimoto

Toshinari Sasaki

Masashi Tsubuku

Takanori Matsuzaki

Hiroyuki Miyake

Yasuyuki Arai

Osamu Nakamura

Shinji Maekawa

Rumo Satake

Toru Takayama

Satoshi Murakami

Satoru Okamoto

Mai Akiba

Takahiro Fukutome

Masahiko Hayakawa

Yoshiaki Oikawa

Koji Dairiki

Yuta Endo

Hiromi Yanai

Hiroki Ohara

Tetsuji Ishitani

Yoshiaki Ito

Takuro Ohmaru

Kentaro Hayashi

Junichi Koezuka

Kenichi Okazaki

Masami Jintyou

Yasuharu Hosaka

Gen Fujii

Daisuke Kurosaki

Junpei Sugao

Takahiro Iguchi

Naoto Goto

Yoshiharu Hirakata

Kei Takahashi

Hideto Ohnuma

Hisao Ikeda

Daisuke Kubota

Yuki Okamoto

Hiroko Abe

Yasumasa Yamane

Tomoyuki Iwabuchi

Saishi Fujikawa

Tsutomu Murakawa

Kosei Nei

Makoto Yanagisawa

Hiroaki Honda

Hiromi Sawai

Junichiro Sakata

Hidekazu Miyairi

Takeshi Nishi

Koji Kusunoki

Hiromichi Godo

Takeshi Osada

Kensuke Yoshizumi

Daisuke Matsubayashi

Tomoaki Atsumi

Hidetomo Kobayashi

Kazutaka Inukai

Shou Nagao

Kiyofumi Ogino

Satoshi Kobayashi

Ryo Tokumaru

Yoshinori Ieda

Teruyuki Fujii

Hiroki Dembo

Haruyuki Baba

Satoshi Shinohara

Kiyotaka Kimura

Takeya Hirose

Kazuki Tsuda

Miki Suzuki

A display apparatus capable of performing image capturing with high sensitivity is provided. The display apparatus includes a light-emitting element including a light-emitting layer, and a light-receiving element including a photoelectric conversion layer. A transflective electrode is provided over the light-emitting layer, and a transparent electrode is provided over the photoelectric conversion layer. With a structure where the transflective electrode does not overlap the photoelectric conversion layer, a reduction in light-receiving sensitivity of the light-receiving element can be prevented while a microcavity structure is used for the light-emitting element. Thus, the display apparatus can emit light with high color purity and perform image capturing with high sensitivity.

Display apparatus, method for manufacturing display apparatus, display module, and electronic device

To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other; and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

Display device and electronic device

A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.

An object is to provide a display device that performs accurate display. A circuit is formed using a transistor that includes an oxide semiconductor and has a low off-state current. A precharge circuit or an inspection circuit is formed in addition to a pixel circuit. The off-state current is low because the oxide semiconductor is used. Thus, it is not likely that a signal or voltage is leaked in the precharge circuit or the inspection circuit to cause defective display. As a result, a display device that performs accurate display can be provided.

Display device

A semiconductor device where delay or distortion of a signal output to a gate signal line in a selection period is reduced is provided. The semiconductor device includes a gate signal line, a first and second gate driver circuits which output a selection signal and a non-selection signal to the gate signal line, and pixels electrically connected to the gate signal line and supplied with the two signals. In a period during which the gate signal line is selected, both the first and second gate driver circuits output the selection signal to the gate signal line. In a period during which the gate signal line is not selected, one of the first and second gate driver circuits outputs the non-selection signal to the gate signal line, and the other gate driver circuit outputs neither the selection signal nor the non-selection signal to the gate signal line.

Semiconductor device

A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

Semiconductor device with first and second elements and electronic device

To provide a novel input/output panel that is highly convenient or reliable, a novel input/output device that is highly convenient or reliable, a novel input/output panel, a novel input/output device, or a novel semiconductor device. The input/output panel includes a pixel, a sensor element, a signal line, a control line, and a scan line. The sensor element has a region overlapping with the pixel. The signal line is electrically connected to the sensor element and the pixel. The control line is electrically connected to the sensor element. The scan line is electrically connected to the pixel.

Input/output panel and input/output device

A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.

Semiconductor device and electronic device

A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.

A semiconductor device that can perform product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits; the first circuit includes a first holding node and the second circuit includes a second holding node. The first circuit is electrically connected to first and second input wirings and first and second wirings, the second circuit is electrically connected to the first and second input wirings and the first and second wirings, and the first and second circuits each have a function of holding first and second potentials corresponding to first data at the first and second holding nodes. When a potential corresponding to second data is input to each of the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring and the second circuit outputs a current to the other of the first wiring and the second wiring. The currents output from the first and second circuits to the first wiring or the second wiring are determined in accordance with the first and second potentials held at the first and second holding nodes.

To improve viewing angle characteristics by varying voltage which is applied between liquid crystal elements. A liquid crystal display device in which one pixel is provided with three or more liquid crystal elements and the level of voltage which is applied is varied between the liquid crystal elements is varied. In order to vary the level of the voltage which is applied between the liquid crystal elements, an element which divides the applied voltage is provided. In order to vary the level of the applied voltage, a capacitor, a resistor, a transistor, or the like is used. Viewing angle characteristics can be improved by varying the level of the voltage which is applied between the liquid crystal elements.

Liquid crystal display device

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first pixel, a second pixel, and a functional layer. The first pixel includes a first display element, and the second pixel includes a second display element. The functional layer includes a first pixel circuit and a second pixel circuit. The first display element includes a first electrode, a second electrode, and a layer containing a liquid crystal material. A first distance is provided between the first electrode and the functional layer. A second distance is provided between the second electrode and the functional layer. The first electrode and the second electrode each include a region overlapping with the layer containing a liquid crystal material. The second distance is shorter than the first distance. The second display element includes a third electrode, a fourth electrode, and the layer containing a liquid crystal material. A third distance is provided between the third electrode and the functional layer. A fourth distance is provided between the fourth electrode and the functional layer. The fourth distance is shorter than the third distance and longer than the first distance.

Display panel, display device, input/output device, and data processing device

An input/output device includes a first sensor electrode and a second sensor electrode. In addition, the input/output device includes a first electrode and a second electrode which are electrodes for a display element, and a substrate sandwiched between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed concurrently with the first electrode using the same material. The input/output device sensors a change in capacitance of a capacitor formed between the first sensor electrode and the second sensor electrode. Furthermore, a third sensor electrode to which a floating potential is applied may be provided to overlap with the first electrode. In the input/output device, either a liquid crystal element or a light-emitting element may be used, or both the liquid crystal element and the light-emitting element may be used.

Input/output panel, input/output device, and semiconductor device

To suppress a malfunction of a circuit due to deterioration in a transistor. In a transistor which continuously outputs signals having certain levels (e.g., L-level signals)

A semiconductor device with low power consumption that is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, an input terminal of the second FTJ element, and a gate of the second transistor. A first terminal of the second transistor is electrically connected to a second terminal of the third transistor. For data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with data. For data reading, a voltage that does not cause a change in polarization is applied between the input terminal of the first FTJ element and the output terminal of the second FTJ element, a potential is supplied to the gate of the second transistor, and a current or voltage corresponding to data is obtained from the first terminal of the second transistor.

Growing community of inventors

Kanagawa, Japan

Hajime Kimura