Semiconductor Energy Laboratory Co., Ltd.

Other

Hajime Kimura

Shunpei Yamazaki

Atsushi Umezaki

Jun Koyama

Hideki Uochi

Yu Yamazaki

Yoshifumi Tanada

Yasunori Yoshida

Yasuko Watanabe

Hideaki Kuwabara

Atsushi Miyaguchi

Yoshiyuki Kurokawa

Hideaki Shishido

Yutaka Shionoiri

Yukie Suzuki

Keisuke Miyagawa

Tatsunori Inoue

Kiyoshi Kato

Mitsuaki Osame

Takayuki Ikeda

Aya Anzai

Yasuhiro Jinbo

Masato Yonezawa

Satoshi Seo

Tatsuya Onuki

Ryota Fukumoto

Hitoshi Kunitake

Masafumi Morisue

Kengo Akimoto

Toshinari Sasaki

Masashi Tsubuku

Takanori Matsuzaki

Hiroyuki Miyake

Yasuyuki Arai

Osamu Nakamura

Shinji Maekawa

Rumo Satake

Takahiro Fukutome

Toru Takayama

Satoshi Murakami

Satoru Okamoto

Mai Akiba

Masahiko Hayakawa

Yoshiaki Oikawa

Koji Dairiki

Yuta Endo

Hiroki Ohara

Tetsuji Ishitani

Yoshiaki Ito

Takuro Ohmaru

Kentaro Hayashi

Junichi Koezuka

Kenichi Okazaki

Masami Jintyou

Yasuharu Hosaka

Gen Fujii

Daisuke Kurosaki

Junpei Sugao

Takahiro Iguchi

Naoto Goto

Yoshiharu Hirakata

Kei Takahashi

Hideto Ohnuma

Hisao Ikeda

Daisuke Kubota

Yuki Okamoto

Hiroko Abe

Yasumasa Yamane

Tomoyuki Iwabuchi

Saishi Fujikawa

Tsutomu Murakawa

Kosei Nei

Makoto Yanagisawa

Hiroaki Honda

Hiromi Sawai

Junichiro Sakata

Hidekazu Miyairi

Takeshi Nishi

Koji Kusunoki

Hiromichi Godo

Takeshi Osada

Kensuke Yoshizumi

Daisuke Matsubayashi

Tomoaki Atsumi

Munehiro Kozuma

Hidetomo Kobayashi

Takeshi Aoki

Kazutaka Inukai

Shou Nagao

Kiyofumi Ogino

Satoshi Kobayashi

Ryo Tokumaru

Yoshinori Ieda

Teruyuki Fujii

Hiroki Dembo

Haruyuki Baba

Satoshi Shinohara

Kiyotaka Kimura

Kazuki Tsuda

Takeya Hirose

An object is to shorten the time for rewriting data in memory cells. A memory module includes a first memory cell, a second memory cell, a selection transistor, and a wiring WBL. The first memory cell includes a first memory node. The second memory cell includes a second memory node. One end of the first memory cell is electrically connected to the wiring WBLthrough the selection transistor. The other end of the first memory cell is electrically connected to one end of the second memory cell. The other end of the second memory cell is electrically connected to the wiring WBL. When the selection transistor is on, data in the first memory node is rewritten by a signal supplied through the selection transistor to the wiring WBL. When the selection transistor is off, data in the first memory node is rewritten by a signal supplied through the second memory node to the wiring WBL

Semiconductor device comprising rewrite transistors, read transistors, and capacitors

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

Semiconductor device and display device

A display apparatus having high display quality is provided. The display apparatus includes a pixel and a circuit. The pixel includes a light-emitting device, a driving transistor, a first switch, a second switch, and a first capacitor. The circuit includes a third switch, a fourth switch, a fifth switch, and a second capacitor. A first terminal of the first switch is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the driving transistor, and an anode of the light-emitting device. A gate of the driving transistor is electrically connected to a first terminal of the second switch and a second terminal of the first capacitor. A second terminal of the first switch is electrically connected to a first terminal of the third switch and a first terminal of the second capacitor. A second terminal of the second capacitor is electrically connected to a first terminal of the fourth switch and a first terminal of the fifth switch.

Display apparatus and electronic device

A semiconductor device includes first to tenth transistors and first to fourth capacitors. Gates of the first and the fourth transistors are electrically connected to each other. First terminals of the first, second, fifth, and eighth transistors are electrically connected to a first terminal of the fourth capacitor. A second terminal of the fifth transistor is electrically connected to a gate of the sixth transistor and a first terminal of the second capacitor. A second terminal of the eighth transistor is electrically connected to a gate of the ninth transistor and a first terminal of the third capacitor. Gates of the second, seventh, and tenth transistors are electrically connected to first terminals of the third and fourth transistors and a first terminal of the first capacitor. First terminals of the sixth and seventh transistors are electrically connected to a second terminal of the second capacitor.

Semiconductor device, display apparatus, and electronic device

A semiconductor device capable of performing arithmetic operation with low power consumption is provided. The semiconductor device includes first and second circuits, a first amplifier circuit, first to fourth switches, and a capacitor, the first circuit is electrically connected to a first wiring, and the second circuit is electrically connected to a second wiring. The first wiring is electrically connected to a first terminal of the capacitor through the first switch, and the second wiring is electrically connected to the first terminal of the capacitor through the third switch. The first terminal of the capacitor is electrically connected to a first terminal of the second switch, and a second terminal of the capacitor is electrically connected to the first amplifier circuit through the fourth switch. Current corresponding to the result of product-sum operation flows through each of the first and second wirings, and the current is converted into potentials by the first and second circuits. A difference between the converted potentials is held in the capacitor, and the difference is input to the first amplifier circuit and is output as a potential corresponding to the arithmetic operation result.

Semiconductor device and electronic device

A system that creates a net list from a circuit diagram or a document showing a circuit structure is provided. The system is an AI system including a first electronic device. The first electronic device includes an input/output interface, a control portion, and a first conversion portion. The input/output interface is electrically connected to the control portion, and the first conversion portion is electrically connected to the control portion. The input/output interface has a function of transmitting input data generated by a user's operation to the control portion, and the control portion has a function of transmitting the input data to the first conversion portion. Note that the input data is a circuit diagram illustrating a circuit structure or a document file showing the circuit structure. The first conversion portion includes a circuit where a neural network is formed, and the input data is converted to a net list with the use of the neural network of the first conversion portion.

AI system and operation method of AI system

A semiconductor device that can perform product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits. The first circuit includes a first holding node and the second circuit includes a second holding node. The first circuit is electrically connected to first and second input wirings and first and second wirings, the second circuit is electrically connected to the first and second input wirings and the first and second wirings, and the first and second circuits have a function of holding first and second potentials corresponding to first data at the first and second holding nodes. When potentials corresponding to second data are input to the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring, and the second circuit outputs a current to the other of the first wiring and the second wiring. The currents output by the first and second circuits to the first wiring and the second wiring are determined in accordance with the first and second potentials held at the first and second nodes.

Semiconductor device that can perform product-sum operation with low power consumption

To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.

Electronic device and driving method thereof

A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first pixel set, a second pixel set, a first conductive film, and a second conductive film; the first pixel set includes a first light-emitting device set and a first pixel circuit set; the first pixel circuit set includes a first group of pixel circuits; and the first group of pixel circuits include a first pixel circuit. The second pixel set includes a second light-emitting device set and a second pixel circuit set; the second light-emitting device set is electrically connected to the second pixel circuit set; the second pixel circuit set includes a second group of pixel circuits; and the second group of pixel circuits include a second pixel circuit. The first conductive film is electrically connected to the first group of pixel circuits and the second group of pixel circuits, and the second conductive film is electrically connected to the first pixel circuit and the second pixel circuit.

Display apparatus having pixel sets including light-emitting devices

A display apparatus capable of performing image capturing with high sensitivity is provided. The display apparatus includes a light-emitting element including a light-emitting layer, and a light-receiving element including a photoelectric conversion layer. A transflective electrode is provided over the light-emitting layer, and a transparent electrode is provided over the photoelectric conversion layer. With a structure where the transflective electrode does not overlap the photoelectric conversion layer, a reduction in light-receiving sensitivity of the light-receiving element can be prevented while a microcavity structure is used for the light-emitting element. Thus, the display apparatus can emit light with high color purity and perform image capturing with high sensitivity.

Display apparatus, method for manufacturing display apparatus, display module, and electronic device

A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.

Display device and electronic device

To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other; and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

An object is to provide a display device that performs accurate display. A circuit is formed using a transistor that includes an oxide semiconductor and has a low off-state current. A precharge circuit or an inspection circuit is formed in addition to a pixel circuit. The off-state current is low because the oxide semiconductor is used. Thus, it is not likely that a signal or voltage is leaked in the precharge circuit or the inspection circuit to cause defective display. As a result, a display device that performs accurate display can be provided.

Display device

A semiconductor device where delay or distortion of a signal output to a gate signal line in a selection period is reduced is provided. The semiconductor device includes a gate signal line, a first and second gate driver circuits which output a selection signal and a non-selection signal to the gate signal line, and pixels electrically connected to the gate signal line and supplied with the two signals. In a period during which the gate signal line is selected, both the first and second gate driver circuits output the selection signal to the gate signal line. In a period during which the gate signal line is not selected, one of the first and second gate driver circuits outputs the non-selection signal to the gate signal line, and the other gate driver circuit outputs neither the selection signal nor the non-selection signal to the gate signal line.

Semiconductor device

A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

Semiconductor device with first and second elements and electronic device

Growing community of inventors

Kanagawa, Japan

Hajime Kimura