Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Other

Kokusai Electric Co., Ltd.

Hajime Karasawa

Yushin Takasawa

Yoshiro Hirose

Kimihiko Nakatani

Kazuhiro Harada

Yoshitomo Hashimoto

Hiroshi Ashihara

Satoshi Shimamoto

Kazuyuki Toyoda

Tsukasa Kamakura

Naoharu Nakaiso

Katsuhiko Yamamoto

Tadanori Yoshida

Kenichi Yamaguchi

Ryota Horiike

Hisashi Nomura

Yoshinori Imai

There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

There is provided a technique for facilitating a patterning process by the DSA appropriately and efficiently. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including (a) accommodating in a process chamber a substrate having a guide pattern thereon; (b) supplying a plasma of a first process gas into the process chamber to subject the substrate to first one of a first process for hydrophilizing the substrate and a second process for hydrophobilizing the substrate; and (c) supplying a plasma of a second process gas into the process chamber to subject the substrate to second one of the first process and the second process other than the first one of the first process and the second process.

Method of manufacturing semiconductor device

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

Substrate processing apparatus for forming film including at least two different elements

Substrate processing apparatus capable of forming films including at least two different elements

Method of manufacturing semiconductor device for forming film including at least two different elements

Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate

Method of manufacturing a semiconductor device by forming a film on a substrate

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a first element, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.

Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including the first element by supplying a gas containing the first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

Method of manufacturing semiconductor device by forming a film on a substrate

Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

Growing community of inventors

Toyama, Japan

Hajime Karasawa