Murata Manufacturing Co., Ltd.

Hajime Kando

Hideki Iwamoto

Syunsuke Kido

Munehisa Watanabe

Michio Kadota

Takashi Iwamoto

Daisuke Yamamoto

Masakazu Mimura

Masakazu Tani

Mari Saji

Toshiyuki Fuyutsume

Keiji Okada

Masahiko Saeki

Yoshiharu Yoshii

Norihiro Hayakawa

Takeshi Nakao

Teruhisa Shibahara

Norihiko Nakahashi

Kiyoto Araki

Naohiro Nodake

Shunsuke Kido

Ippei Hatsuda

Akihiro Teramoto

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Elastic wave device and method for manufacturing the same

A frequency-variable filter includes a filter unit and matching circuits. The filter unit includes frequency-variable resonance circuits that include piezoelectric resonators. The matching circuits have a circuit configuration in which a real number component of an impedance increases as the frequency increases. For example, the matching circuits have an L-type circuit configuration that includes a reactance element connected in shunt to the side of the filter unit and that includes an inductor and a capacitor. As the filter unit includes the piezoelectric resonators, the real number component of the impedance increases as the pass band shifts to a high-frequency side, but the real number component of the impedance increases as the frequency increases in the matching circuits as well. Thus, the impedance matching is achieved.

Frequency-variable filter

A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.

Method for manufacturing piezoelectric device

A resonant circuit includes a resonator having a resonant frequency and an anti-resonant frequency, an inductor connected in series to the resonator, an inductor connected in parallel to the resonator, and a series circuit in which a variable capacitor is connected in series to an inductor (). The series circuit is connected in parallel to the resonator. The anti-resonant frequency closest to the resonant frequency of the resonator is moved toward higher frequencies or lower frequencies of the resonant frequency on a frequency axis with a variation in the capacitance value of the variable capacitor. With this configuration, a resonator device and a high-frequency filter are provided, in which the relationship between a transmission frequency band and a reception frequency band on the frequency axis is applicable to a variety of multiple communication bands.

Resonator device and high frequency filter

A tunable filter using Love waves includes an inductance for band extension connected to each of piezoelectric resonators, variable capacitances are connected to the piezoelectric resonator, the piezoelectric resonators each include a LiNbOsubstrate and an IDT electrode, and a pass band and an attenuation region are positioned in a frequency region on a lower frequency side relative to a value obtained by a calculation in which an acoustic velocity of a low-velocity transversal wave propagating in the LiNbOsubstrate is divided by a wave length defined by a period of the IDT electrode.

Tunable filter

A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO. The first and second electrodes are each formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of a transversal wave that propagates in LiTaO. When the sum of the film thicknesses of the first and second electrodes is defined as an electrode thickness, and the thickness of the piezoelectric thin plate made of LiTaOis defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is not less than 5% and not more than 40%.

Piezoelectric bulk wave device, and method of manufacturing the piezoelectric bulk wave device

A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO, and of the Euler Angles (&#x3c6;, &#x3b8;, &#x3c6;) of LiTaO, &#x3c6; is 0&#xb0;, and &#x3b8; is in the range of not less than 54&#xb0; and not more than 107&#xb0;.

An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO, and Euler angles (&#x3c6;, &#x3b8;, &#x3c8;) of the LiTaOfall within specific ranges.

Elastic wave device and manufacturing method for same

A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO. The first and second electrodes are each formed by a conductor having a specific acoustic impedance higher than the specific acoustic impedance of a transversal wave that propagates in LiTaO. When the sum of the film thicknesses of the first and second electrodes is defined as an electrode thickness, and the thickness of the piezoelectric thin plate made of LiTaOis defined as an LT thickness, the electrode thickness/(electrode thickness+LT thickness) is in the range of not less than 40% and not more than 95%.

A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.

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Ritto, Japan

Hajime Kando