Sharp Display Technology Corporation

Hajime Imai

Tohru Daitoh

Yoshihito Hara

Tatsuya Kawasaki

Masaki Maeda

Yoshiharu Hirata

Teruyuki Ueda

Yohei Takeuchi

Kengo Hara

Tetsuo Kikuchi

Isao Ogasawara

Yuki Yamashita

Akihiro Shohraku

Katsushige Asada

Masafumi Sugino

The active matrix substrate includes a plurality of oxide semiconductor TFTs supported by a substrate. Each of the plurality of oxide semiconductor TFTs includes an oxide semiconductor layer including a channel region, a lower electrode positioned between the oxide semiconductor layer and the substrate, and an insulating layer positioned between the oxide semiconductor layer and the lower electrode. The insulating layer has a layered structure including a lower layer, an upper layer positioned between the lower layer and the oxide semiconductor layer, and an intermediate layer positioned between the lower layer and the upper layer. The upper layer is a silicon oxide layer, the intermediate layer contains at least silicon and nitrogen, and the lower layer contains at least silicon, nitrogen, and oxygen. A hydrogen desorption amount in the lower layer is larger than a hydrogen desorption amount in the intermediate layer.

Active matrix substrate and manufacturing method thereof

A transistor includes a first electrode, a first semiconductor portion that is at least partly superimposed on the first electrode and that is composed of a semiconductor material, a first insulating film that is interposed between the first electrode and the first semiconductor portion, a second electrode that is superimposed on a part of the first semiconductor portion and that is connected to the first semiconductor portion, and a third electrode that is located in a layer in which the second electrode is located, that is superimposed on a part of the first semiconductor portion, and that is connected to the first semiconductor portion. An electric potential of the second electrode is lower than that of the third electrode. The third electrode includes a first portion that is spaced from the second electrode and a second portion that is spaced from the second electrode opposite the first portion.

Transistor, circuit substrate, and display device

An active matrix substrate includes a plurality of thin film transistors including an oxide semiconductor layer, an interlayer insulating layer, a plurality of pixel electrodes arranged above the interlayer insulating layer, a common electrode arranged between the pixel electrode and the interlayer insulating layer and also configured to function as a touch sensor electrode, a first dielectric layer arranged between the interlayer insulating layer and the common electrode, a second dielectric layer arranged between the common electrode and the pixel electrode, a plurality of touch wiring lines arranged between the interlayer insulating layer and the common electrode and formed of a third conductive film, and a plurality of pixel contact portions, in which each of the plurality of pixel contact portions includes a drain electrode of the thin film transistor, a connection electrode formed of the third conductive film and electrically connected to the drain electrode in a lower opening formed in the interlayer insulating layer, and a pixel electrode electrically connected to the connection electrode in an upper opening formed in the first dielectric layer and the second dielectric layer.

Active matrix substrate, method for manufacturing active matrix substrate, and liquid crystal display device with touch sensor using active matrix substrate

An active matrix substrate includes pixel regions each including a pixel electrode and an oxide semiconductor TFT including an oxide semiconductor layer. Each pixel electrode is electrically connected to one of adjacent two of source bus lines. The oxide semiconductor layer in the oxide semiconductor TFT of each pixel region overlaps the pixel electrode of a first adjacent pixel region. The pixel electrode of the each pixel region partially overlaps the oxide semiconductor layer in a second adjacent pixel region. The source bus lines include first and second source bus lines adjacent to each other. Pixels sets each including two pixel regions whose pixel electrodes are connected to the first source bus line and pixel sets each including two pixel regions whose pixel electrodes are connected to the second source bus line are arranged alternately between the first and second source bus lines.

Active matrix substrate and liquid crystal display device

A display panel includes a common electrode formed in an upper layer above a data line, a first insulating layer covering the common electrode, a touch sensor line formed in an upper layer of the first insulating layer and in a first opening provided in the first insulating layer, and connected to the common electrode via the first opening, a second insulating layer covering the touch sensor line, and a pixel electrode formed in an upper layer of the second insulating layer. The first insulating layer is formed with a second opening between the common electrode and the pixel electrode. The second insulating layer is disposed in an interior of the second opening and formed with a recessed portion recessed downward into a portion above the second opening. At least a portion of the pixel electrode is disposed in the recessed portion of the second insulating layer.

Display panel and manufacturing method with improved light transmittance from opening in insulation layer

Growing community of inventors

Kameyama, Japan

Hajime Imai