Canon Kabushiki Kaisha

Tokyo Keiki Company Limited

Hajime Ikeda

Junji Iwata

Yusuke Onuki

Masahiro Kobayashi

Keisuke Ota

Yoichi Wada

Takanori Watanabe

Koichi Fukuda

Nobuhiko Sato

Tatsuhito Goden

Toshinori Hasegawa

Kohei Okamoto

Yoichiro Handa

Takeshi Ichikawa

Kiyofumi Sakaguchi

Mahito Shinohara

Mineo Shimotsusa

Hiroshi Sekine

Fumihiro Inui

Shoji Nishida

Toshiyuki Ogawa

Kazuhiro Morimoto

Kazuya Notsu

Takafumi Miki

Kunihiko Takeuchi

Makoto Higashikawa

Shunichi Wakashima

Shinichi Horinouchi

Yoshihisa Kabaya

Shuhei Hayashi

Daisuke Kobayashi

Yukihiro Kuroda

Naoki Ishikawa

Takeshi Kojima

Yasuhiro Sekine

Yasushi Matsuno

Taro Kato

Kazunari Kawabata

Ginjiro Toyoguchi

Takenori Kobuse

Yoshiaki Takada

Yusuke Yamashita

Takahiro Yamasaki

Koji Hara

Akira Ohtani

Daichi Seto

Kazuya Igarashi

Kento Watanabe

Zempei Wada

Takahiro Kamikura

Fumiaki Mizutani

Shigeharu Aoki

Taro Takita

Hideyuki Ito

Takumi Watanabe

Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Photoelectric conversion device, imaging system, and mobile apparatus

A photoelectric conversion member included in a photodiode PDis disposed at the position overlapping with a section B, a photoelectric conversion member included in a photodiode PDis disposed at the position overlapping with a section B, and a photoelectric conversion member included in the photodiode PDis disposed at the position overlapping with a section B. A plurality of electrodeseach forming a Metal-Insulator-Semiconductor (MIS) structure together with a semiconductor layeris disposed on a front surface FS of the semiconductor layer. At least one of the plurality of electrodesoverlaps with at least one of eight sections Bto B

Semiconductor apparatus and device

A photoelectric conversion device includes pixels each including a photoelectric conversion unit for generating charge by photoelectric conversion, first to fourth charge holding portions configured to be transferred charge from the photoelectric conversion unit, and an output unit for outputting a signal corresponding to charge transferred from one of the first to fourth charge holding portions, and a control circuit for controlling the plurality of pixels. The control circuit performs, during one frame, transferring charge in the photoelectric conversion unit to the first or second charge holding portion a plural times for each of the first and second charge holding portions in each of the pixels at the same time, and performs, during the one frame, reading out from each pixel a signal corresponding to charge in the third charge holding portion and a signal corresponding to charge in the fourth charge holding portion.

Photoelectric conversion device and method of driving photoelectric conversion device

An apparatus includes pixels on a substrate. Each pixel includes a first portion, a second, and a microlens. The substrate has a first surface on an incidence side and a second surface opposite to the first surface, and includes an inter-pixel portion isolating adjacent pixels from each other, and an intra-pixel portion isolating the first and second portions from each other. The inter-pixel portion includes a first region located adjacently to the first surface, and a second region located adjacently to the second surface. The intra-pixel portion includes a third region located adjacently to the first surface, and a fourth region located adjacently to the second surface. The first and third regions are shifted with respect to the second and fourth regions, respectively, in an identical direction that is a direction orthogonal to a longitudinal direction of the intra-pixel portion in plan view from the first surface.

Apparatus, system, and moving body

A detector includes a unit cell array in which a plurality of unit cells are arranged. The plurality of unit cells include a first unit cell including a first conversion element and a first amplification transistor including a control electrode connected to the first conversion element, the first unit cell being configured to output a signal obtained by amplifying the signal charge by the first amplification transistor, and a second unit cell including a second amplification transistor including a control electrode connected to a constant voltage source, the second amplification transistor being configured to output a signal corresponding to a voltage of the constant voltage source by the second amplification transistor. The first unit cell and the second unit cell are disposed in an irradiated region in the unit cell array, the irradiated region being configured to be irradiated with the energy beam.

Detector and detection system

An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.

Photoelectric conversion apparatus, photoelectric conversion system, and moving body

A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.

Photoelectric conversion apparatus and equipment

A photoelectric conversion apparatus includes a first semiconductor region of a first conductivity type at a first depth from a first surface, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth from the first surface so as to be in contact with the first semiconductor region, and a third semiconductor region of the second conductivity type extending from the first surface to a third depth shallower than the second depth and being in contact with the first semiconductor region and the second semiconductor region. The third semiconductor region has a higher impurity concentration than the second semiconductor region. A second electric potential lower than the first electric potential for a carrier of the first conductivity type is applied to the third semiconductor region. The second semiconductor region has an impurity concentration of 1&#xd7;10[atom/cm] or less.

Photoelectric conversion apparatus, photoelectric conversion system, and moving object

A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.

Photodetection device and photodetection system

A photo-detection device in one embodiment includes: a first semiconductor region that accumulates a signal charge based on an incident light; a second semiconductor region that is capable of accumulating a signal charge, the number of signal charges that can be accumulated in the second semiconductor region being less than the number of signal charges that can be accumulated in the first semiconductor region; a first gate that transfers the signal charge from the first semiconductor region to the second semiconductor region; and a charge multiplication unit that includes a third semiconductor region and avalanche-multiplies the signal charge transferred from the second semiconductor region to the third semiconductor region.

Photo-detection device and imaging system

A photoelectric conversion apparatus includes a semiconductor substrate, first and second micro lenses, a first filter with a transmittance of infrared light, and a second filter with a transmittance of visible light. At least one photoelectric conversion portion disposed so as to overlap the first filter in a planar view and a plurality of photoelectric conversion portions disposed so as to overlap the second filter in the planar view each include a first semiconductor region and a second semiconductor region. An impurity concentration of at least a part of the second semiconductor region of the at least one photoelectric conversion portion is lower than an impurity concentration of a portion in the second semiconductor regions of the plurality of photoelectric conversion portions that is disposed at the same depth as the at least a part of the second semiconductor region.

Photoelectric conversion apparatus

An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Qgenerated by the photoelectric converter during one exposure period, a saturation charge amount Qof the first holding portion, and the maximum charge amount Qthat can be held in the potential well are in a relationship of: Q&#x3c;Q&#x2264;Q.

Imaging device and imaging system

Growing community of inventors

Yokohama, Japan

Hajime Ikeda