Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Hajime Hayakawa

Hiroyuki Itoh

Fumio Murai

Takumi Ueno

Hiroshi Shiraishi

Asao Isobe

Kazumitsu Nakamura

Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

Method of forming pattern and making semiconductor device using

A charged particle beam projection aligner comprising a particle beam source for irradiating a particle beam, a sectional shape forming device thereof, an electron lens and a deflector, a wafer mounted on a XY table and a vacuum column in which these devices are installed, further comprising an optical device which irradiates a light beam in the same direction as an irradiating direction of the particle beam, a detector for detecting a light beam reflected from alignment marks on the wafer by irradiating the light beam, and for detecting a reflected light beam and a reflected electron beam reflected from a fiducial mark on the XY table by irradiating the light beam and the particle beam, and a computer for memorizing lithographic patterns, correcting said lithographic patterns with signals from the detector and outputting the corrected lithographic patterns to the electron lens and the deflector so as to control them. Since the light beam is irradiated on the wafer in the same direction as the direction of the particle beam, an offset error of the pattern alignment is minimized.

Charged particle beam projection aligner having position detector using

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Kunitachi, Japan

Hajime Hayakawa