National Institute for Materials Science

Hajime Haneda

Naoki Ohashi

Isao Sakaguchi

Takamasa Ishigaki

Takashi Sekiguchi

Haruki Ryoken

Yutaka Adachi

Tadashi Takenaka

Hiroyuki Taguchi

Takeshi Ohgaki

Ken Kataoka

Naoki Nat Inst For Materials Science Ohashi

A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va&#x3c;Vb and Na&#x3e;Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

Zinc oxide-based multilayer structural body and its producing method

The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.

Zinc oxide phosphor, process for producing the same and light emitting device

Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Zinc oxide resistor and its manufacturing method

Growing community of inventors

Ibaraki, Japan

Hajime Haneda