Tokyo Electron Limited

Hajime Furuya

Masahiko Sugiyama

Naoki Akiyama

Shintaro Sugihara

Masahiro Yamamoto

Yosuke Omori

Keiichi Matsushima

Hideki Tanaka

Goro Furutani

Michikazu Nakamura

Tomoya Okubo

Yasunobu Iwamoto

Ryoko Kobayashi

Provided is a device of bonding substrates together, which includes a first holding unit configured to vacuum-draw a first substrate and to adsorptively hold the first substrate on a lower surface thereof and a second holding unit installed below the first holding unit and configured to vacuum-draw a second substrate and to adsorptively hold the second substrate on an upper surface thereof. The second holding unit includes: a body portion configured to vacuum-draw the entire surface of the second substrate; a plurality of pins installed on the body portion and configured to make contact with a rear surface of the second substrate; and a support portion installed on the body portion at the outer side of the pins, the support portion having a reduced contact area over which the support portion makes contact with an outer peripheral portion of the second substrate.

Bonding device and bonding system

A joining device includes a first holding unit configured to load and hold the first member on its top surface; a second holding unit disposed above the first holding unit while facing the first holding unit and configured to hold the second member; and a position adjustment mechanism configured to adjust a joining position between the first member held by the first holding unit and the second member held by the second holding unit. The second holding unit is of a circular plate shape, and the position adjustment mechanism includes four position-adjusting cam members disposed at equal intervals along an outer peripheral surface of the second holding unit, and moves the second holding unit in a horizontal direction.

Joining device and joining position adjustment method using joining device

A joining device for joining substrates with an intermolecular force includes a first holding unit configured to hold a first substrate on a lower surface thereof, a second holding unit installed below the first holding unit and configured to hold a second substrate on an upper surface thereof, and a temperature adjustment mechanism configured to adjust a temperature of the first substrate before the first substrate is held in the first holding unit and a temperature of the second substrate before the second substrate is held in the second holding unit to a predetermined temperature.

Joining device, joining system and joining method

A bonding apparatus for bonding substrates having metal bonding portions, includes: a processing container having an opening formed on the bottom of the processing container; a thermal treating plate disposed within the processing container, the thermal treating plate allowing for substrates to be mounted thereon and allowing for thermal treatment of the substrates; a pressing mechanism disposed within the processing container opposite the thermal treating plate and which presses the substrates to the thermal treating plate; an annular supporter which is disposed in an inner side of the processing container along the opening of the processing container, the annular supporter providing an airtight seal between the processing container and the thermal treating plate, and supporting the thermal treating plate; and a cooling mechanism which is disposed in an inner side of the supporter below the thermal treating plate, the cooling mechanism cooling the thermal treating plate.

Bonding apparatus

A plasma processor electrode includes a support member disposed to face to an electrode that holds a substrate to be treated, an electrode plate fixed to the support member and equipped with gas injection holes and a screw hole open and facing to the support member to supply a processing gas through the gas discharge hole into a processing space formed between the electrode plate and the electrode to generate a plasma in the processing space, and a fastening unit that clamps the electrode plate on the support member by fastening the electrode plate to the support member with a screw driven into the screw hole from the support member.

Plasma processor electrode and plasma processor

A method of resetting a substrate processing apparatus having a chamber which is capable of carrying out abnormality judgment on the substrate processing apparatus accurately without causing a decrease in the utilization ratio of the substrate processing apparatus. The chamber is evacuated. A temperature in the chamber is set. Whether or not there is an abnormality in the chamber is judged. An atmosphere in the chamber is stabilized so as to conform to predetermined processing conditions. At least one selected from data that change in response to a change in a state inside the chamber is measured. The measured data is compared with reference data that corresponds to the measured data for a normal state in the chamber.

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Koshi, Japan

Hajime Furuya