Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Hajime Eda

Yukiteru Matsui

Gaku Minamihaba

Akifumi Gawase

Kyoichi Suguro

Masatoshi Yoshikawa

Minoru Amano

Atsushi Shigeta

Masako Kodera

Motoyuki Sato

Nobuyuki Kurashima

Masayoshi Iwayama

Takahiko Kawasaki

Takatoshi Ono

Yosuke Otsuka

Satoko Seta

According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.

Planarization method and planarization apparatus

In accordance with an embodiment, a polishing method includes supplying slurry to a surface of a polishing layer including a polymer, and bringing a polishing object into contact with the polishing layer to polish the polishing object. The polishing layer has a fibrous first substance mixed therein or contains a second substance. The second substance is higher in specific heat and higher in thermal conductivity than the polymer in such a manner that the second substance is surrounded by the polymer.

Abrasive cloth and polishing method

In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.

Manufacturing method of semiconductor device

According to an embodiment, a method of manufacturing a semiconductor device includes forming a wiring groove on an insulating film; forming a barrier metal layer and a metal layer; polishing the metal layer by applying a first load on the metal layer; and subsequently polishing the metal layer while applying a second load larger than the first load on the metal layer and spraying a gas onto a polishing pad. The polishing pad is in contact with the metal layer. The barrier metal layer covers an upper surface of the insulating film and an inner surface of the wiring groove, and the metal layer fills an inside of the wiring groove and covers the barrier metal layer.

Manufacturing method of semiconductor device and polishing apparatus

According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40&#xb0; C. (inclusive) to 50&#xb0; C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5&#xb0; C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30&#xb0; C. or less, and the exit temperature is adjusted to be higher by 5&#xb0; C. or more than the entrance temperature.

Semiconductor device manufacturing method

In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

Growing community of inventors

Mie-ken, Japan

Hajime Eda