Fujitsu Corporation

Haizhi Song

Tatsuya Usuki

A quantum dot () is formed on a GaAs substrate (). In the quantum dot (), a single electron exists. A cap layer () is formed on a surrounding area of the quantum dot (), and a barrier layer () is formed thereon. A quantum dot () for detection is formed on the barrier layer (). Then, a cap layer () covering the quantum dot () and the like is formed.

Quantum device, control method thereof and manufacturing method thereof

By bringing a tip of an AFM into contact with the surface of a GaAs substrate or an AlGaAs substrate, for example, applying a negative bias to the tip, and applying a positive bias to the GaAs substrate or the AlGaAs substrate, a donut-shaped oxide film is formed. Then, the oxide film is removed. As a result, a ring-shaped groove is formed in the surface of the GaAs substrate or the AlGaAs substrate. The oxide film can be removed by chemical etching, ultrasonic cleaning with water, a treatment with atomic hydrogen in a vacuum, or the like. Thereafter, a semiconductor film (InAs film or InGaAs film, for example) is epitaxially grown in the groove. Then, a capping layer which covers the semiconductor film and the GaAs substrate or the AlGaAs substrate is formed.

Growing community of inventors

Kawasaki, Japan

Haizhi Song