Kabushiki Kaisha Toshiba

Haiyang Peng

Koichiro Zaitsu

Hiroki Noguchi

Shinichi Yasuda

Takao Marukame

Yuichiro Mitani

Masamichi Suzuki

Yusuke Higashi

According to an embodiment, an imaging element includes a plurality of light receiving elements, a plurality of scanning circuits, a first line comprising a plurality of nodes, and a plurality of first variable resistance elements. The plurality of scanning circuits are respectively connected to the plurality of light receiving elements. Each of the plurality of first variable resistance elements is connected between the corresponding one of the nodes and a corresponding one of the scanning circuits. At least one of the first variable resistance elements includes a plurality of resistance elements connected to each other in parallel.

Imaging element for use with a retina chip, imaging apparatus including the same, and semiconductor apparatus included in the same

According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.

Nonvolatile memory integrated circuit with built-in redundancy

Growing community of inventors

Kanagawa, Japan

Haiyang Peng