Jiangnan University

Haiyan Nan

Xiaofeng Gu

Daqing Li

Shaoqing Xiao

Feng Shao

The disclosure relates to a method for regulating photocurrent of IGZO based on a two-dimensional black phosphorus material, and belongs to the field of semiconductor devices. The disclosure provides a method for preparing an IGZO-black phosphorus heterostructure by dry transfer technology, and by changing the contact mode between IGZO and black phosphorus, photocurrent response of the IGZO to different laser light wavelengths can be regulated. In the method, both a channel and electrodes of the IGZO are magnetron sputtered by means of masks, and the method has good repeatability and can realize preparation of large-area multi-devices. A black phosphorus sample is prepared by a mechanical exfoliation method, and has controllable thickness and size. A heterojunction is prepared by dry transfer technology, and the technology is easy to operate and highly controllable. The disclosure is beneficial to promote development of IGZO thin films in the micro-nano field and the semiconductor industry.

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Wuxi, China

Haiyan Nan