Industry-University Cooperation Foundation Hanyang University

Hanyang Hak Won Co., Ltd.

Iucf-hyu

Haiwon Lee

Chung Choo Chung

Hyunjin Yoon

Yongil Kim

Cheolsu Han

Heeyoung Oh

Tae-Jae Lee

Young-hwan Kim

Jung-Eun Seo

Hyeyoung Park

Sung Soo Kim

Meehye Jeong

Ashok D Sagar

Chung-Choo Chung

An organic/inorganic composite is provided. The organic/inorganic composite comprises a silicon (Si) substrate formed with nanorods or nanoholes and three-dimensional networks of carbon nanotubes (CNTs) grown horizontally in parallel and suspended between the adjacent nanorods or inside the nanoholes. In the organic/inorganic composite, metal catalysts can be uniformly formed on the nanorods or inside the nanoholes, irrespective of the height of the nanorods or the depth of the nanoholes and the shape and aspect ratio of the nanorods or nanoholes. In addition, the carbon nanotubes grow in a three-dimensional network structure directly over the entire surface of the nanorods or the whole inner surface of the nanoholes and are directly connected to the base electrodes. With this configuration, the three-dimensional carbon nanotube networks are highly dense per unit volume, and the organic/inorganic composite is highly electrically conductive and has a large surface area. Therefore, the use of the organic/inorganic composite enables the fabrication of an electronic device with greatly improved efficiency. Further provided are a method for preparing the organic/inorganic composite and an electronic device fabricated using the organic/inorganic composite.

Organic/inorganic composite comprising three-dimensional carbon nanotube networks, method for preparing the organic/inorganic composite and electronic device using the organic/inorganic composite

Disclosed is a copolymer suitable for use as a resist for atomic force microscope (AFM) lithography or e-beam lithography. The copolymer contains fluoroalkylsulfonium salts as photoacid generators. The copolymer has high solubility in organic solvents and high coating ability. In addition, the copolymer can be patterned with high sensitivity and resolution by lithography. Further disclosed is a method of preparation for the copolymer.

Resist copolymers containing photoacid generators for lithographic applications and its method of preparation

Disclosed herein are an automatic landing method for a scanning probe microscope and an automatic landing apparatus using the same. The method comprises irradiating light to a cantilever using a light source; collecting interference fringes generated by the light being diffracted from the edge of the cantilever and then being incident to a surface of the sample; driving the tip in the sample direction until the pattern of the interference fringes reaches a predetermined pattern region (first driving); and driving the tip in the sample direction after the interference fringe pattern reached the predetermined pattern region (second driving). The method in accordance with the present invention is very effective particularly for samples having a large surface area, because it enables automatic landing of a tip according to recognition and selection of an optimal time point for individual landing steps, irrespective of adverse changes in landing conditions, such as surface irregularities of samples. Further, the present invention enables a very inexpensive and effective application of a scanning probe microscope (SPM), because it is possible to achieve rapid and reliable driving of a tip to within an approximate distance of a sample.

Automatic landing method and apparatus for scanning probe microscope using the same

The present invention relates to a novel compound with a fluoroalkylsulfonium photoacid generating group and novel copolymers having superior solubility in organic solvents, which is prepared from radical polymerization of the novel compound with methacrylate monomers.

Monomer substituted photoacid generator of fluoroalkylsulfon and a polymer thereof

An apparatus and method for providing an input signal having a desired pulse width and amplitude to atomic force miscoscopes (AFMs) for use in nano-lithography are provided. An input signal providing apparatus for a contact type AFM includes: a pulse width adjusting unit which adjusts the width of a positive pulse of an input square wave to a predetermined pulse width; and an amplitude adjusting unit which adjusts the amplitude of the positive pulse of the square wave to a predetermined voltage. An input signal providing method for the contact type AFM uses the apparatus having this structure. An input signal providing apparatus for a non-contact type AFM further includes a square pulse generating unit which generates a square pulse having a predetermined phase in synchronization with an input resonance signal, and an input signal providing method for the non-contact type AFM further involves generating the square pulse having a predetermined phase in synchronization with the input resonance signal. As a result, more precise nano-lithography can be achieved using an AFM to which the apparatus and method described above are applied.

Apparatus and method for providing square wave to atomic force microscope

This invention relates to nano-lithography with &pgr;-conjugated azo dyes and azo-metal complexes represented by formula 1 or formula 2(Korea Pat. Appln. Nos. 2001-6879&tilde;6880), which has both electron-donating and electron-accepting groups in the molecular structures, as a resist on Si substrate by using an AFM anodization. lithography. Developing optimum conditions of scan speed, bias voltage, and resist materials are key issues for achieving a high resolution patterning on various substrates. We accomplished nanometer-scale patterning in approximately 35 nm dimensions.

Azo dyes and azo-metal complexes for atomic force microscope lithography

Silicon-containing polymer and bilayer resist composition based thereon

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Seoul, South Korea

Haiwon Lee