Opple Lighting Co., Ltd.

Semiconductor Manufacturing International (shanghai) Corporation

Suzhou Opple Lighting Co., Ltd.

Huawei Technologies Co., Limited

Tongji University

Haitao Jiang

Gangning Wang

Jiangpeng Xue

Xinsheng Zhong

Jun Wu

Jun Jiang

Hong Chen

Yong Sun

Zhiwei Guo

Yunhui Li

Kejia Zhu

The present invention provides a multi-load wireless power transfer system based on high-order Anti-PT symmetry. By introducing a 'W-shaped' anti-resonance mode into a basic WPT platform, an effective Anti-PT non-Hermitian system is conveniently constructed. The “level attraction” of the anti-resonance mode is combined with the “level splitting” of the anti-resonance mode and the resonance mode, to study the “level pinning” effect of high-order Anti-PT symmetry. Compared with the traditional resonant WPT, the anti-resonant WPT has higher security, stability, transfer efficiency, and flexibility. Considering the miniaturization and integration of devices, a “meta coil” is designed by using a “synthetic dimension”, and used to construct a high-order Anti-PT symmetric system, thereby achieving multi-load efficient WPT. The new WPT technology based on the “level pinning” effect of high-order Anti-PT symmetry provides a good application research platform for enriching non-Hermitian physics.

Multi-load wireless power transfer system based on high-order anti-PT symmetry

The application discloses a lighting fixture. The lighting fixture includes a base assembly; and a bracket assembly connected with the base assembly. The bracket assembly is configured to carry a first lamp body. The bracket assembly includes a first lamp pole movably connected with the base assembly, so that the first lamp pole is capable of moving close to or moving away from the base assembly.

Lighting fixtures

The disclosure provides an intelligent lamp controller device for wirelessly controlling a lamp. The intelligent lamp controller device includes: at least one button, configured to receive a user's operation; a main control circuit board, configured to generate a lamp control instruction according to the user's operation received by the at least one button; a control instruction transmitter, electrically connected to the main control circuit board, and configured to receive the lamp control instruction from the main control circuit board and wirelessly transmit the lamp control instruction to the lamp, to control the lamp to emit light; and a preview light source, electrically connected to the main control circuit board, and configured to emit light according to the user's operation under control of the main control circuit board, so as to exhibit a luminescence effect corresponding to the user's operation to the user.

Intelligent lamp controller device

A lighting device and a light housing are provided. The lighting device includes a housing, and the housing is provided with a light exit and an accommodating cavity extending inward from the light exit; the lighting device further includes a first light source, a second light source, and a controller. The controller controls at most one selected from a group consisting of the first light source and the second light source to emit light. Both the first light source and the second light source are disposed in the accommodating cavity. The first light source is used for an auxiliary lighting mode, in the case where the first light source emits light, the background image is visible from the light exit; and the second light source is used for a main lighting mode.

Lighting device and light housing

A method and a system for implementing ring back tones and ring back images in the VP service provides quality-assured and customized ring back tones and ring back images. A control module plays the ring back tones and ring back images for calling UEs through a voice and image channel defined in the VP series of protocols by resolving or pre-negotiating the voice and image coding formats supported by the calling UEs.

Method and system for implementing ring back tones and ring back images in the VP service

A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.

SONOS flash memory

A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory includes preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; and filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easier to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer, and the short circuit between different memory cells may be avoided.

Growing community of inventors

Shanghai, China

Haitao Jiang