Intel Corporation

University of California

Haisheng Rong

John Heck

Yun-Chung Na

Mario J Paniccia

Ansheng Liu

David Neil Hutchison

Harel Frish

Jonathan K Doylend

Meer Nazmus Sakib

Hao Li

Assia Barkai

Mahesh Krishnamurthi

Ranjeet Kumar

Ganesh Balamurugan

Jie Sun

Oshrit Harel

I-Wei Andy Hsieh

Duanni Huang

Ling Liao

Han-Din Liu

Michael T Morse

Richard O Jones

Avi Feshali

Shengbo Xu

Wenhua Lin

Israel Petronius

Aliasghar Eftekhar

Woosung Kim

Judson D Ryckman

Daniel Grodensky

David Arbel

Guan-Lin Su

Ying-hao Kuo

Chaoxuan Ma

Peicheng Liao

Charles H Dennison

Derchang Kau

Pradeep Srinivasan

Sergei L Sochava

Ming C Wu

Jeffrey B Driscoll

David Hui

Hari Mahalingam

Saeed Fathololoumi

Taehwan Kim

George A Ghiurcan

Hasitha Jayatilleka

Jonathan Doylend

Michael E Favaro

Kyu Hyun Kim

Wesley Harrison

Jahnavi Sharma

Stefan Meister

Joshua Keener

Ofir Gan

Jacob B Sendowski

Randal Appleton

Mohammad Montazeri Najafabadi

Karan Mehta

Carsten Brandt

Michael A Creighton

Isako Hoshino

Jacob Sendowski

In one embodiment, a distributed feedback laser includes a laser comprising a waveguide, the waveguide having a variable width from a first end to a second end, the laser to generate optical energy of a plurality of lasing wavelengths. Other embodiments are described and claimed.

Multi-wavelength distributed feedback laser

Embodiments described herein may be related to apparatuses, processes, and techniques related to fully integrated optical coherent modulators on a silicon chip. These coherent modulators may be used to enable transmitters, receivers, transceivers, tunable lasers and other optical or electro-optical devices to be integrated on a silicon chip. In embodiments, the optical coherent modulators may be based on differential microring modulators that may be nested in a Mach-Zehnder Interferometer (MZI) configuration. Embodiments may also be directed to a miniaturized and fully integrated coherent modulators, which can enable terabit per second (Tbps) transceivers in a small form factor based on coherent modulation on a silicon chip. Other embodiments may be described and/or claimed.

Optical coherent transmitter on a silicon chip

The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.

Photonic wavelength division multiplexing (WDM) receiver with polarization diversity and/or low reflectance

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Silicon photonic integrated circuits on substrates with structured insulators having specific thicknesses in separate zones

Embodiments of the present disclosure are directed to multi-wavelength laser generator may produce light with a frequency comb having equally spaced frequency lines. In various embodiments, the laser generator includes first, a semiconductor gain element is used to provide gain to the laser being generated. Second, a ring resonator filter, or ring filter, is used to select the wavelength comb spacing. Third, a narrow-band DBR or narrow-band mirror is used to select the number of wavelengths that lase. Fourth, a wide-band or narrow-band mirror is used to provide optical feedback and to form the optical cavity. Fifth, a phase tuner section is used to align the cavity modes with the ring resonances (i.e. the ring filter modes) in order to reduce or minimize the modal loss. Other embodiments may be described and/or claimed.

Multi-wavelength laser generator using ring filter

Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Optical coherent receiver on a chip

Technology for light detection and ranging (LIDAR) sensor can include an optical signal source, an optical modulation array and optical detector on the same integrated circuit (IC) chip, multi-chip module (MCM) or similar solid-state package.

Integrated optical transmitter and receiver

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

Mechanisms for refractive index tuning semiconductor photonic devices

Embodiments include apparatuses, methods, and systems including a laser device having a 1&#xd7;3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

Multi-mode interference (MMI) based laser devices for heterogeneous platforms

Embodiments of the present disclosure are directed toward techniques and configurations for a photonic apparatus with a photodetector with bias control to provide substantially constant responsivity. The apparatus includes a first photodetector, to receive an optical input and provide a corresponding electrical output; a second photodetector coupled with the first photodetector, wherein the second photodetector is free from receipt of the optical input; and circuitry coupled with the first and second photodetectors, to generate a bias voltage, based at least in part on a dark current generated by the second photodetector in an absence of the optical input, and provide the generated bias voltage to the first photodetector. The first photodetector is to provide a substantially constant ratio of the electrical output to optical input in response to the provision of the generated bias voltage. Additional embodiments may be described and claimed.

Photonic apparatus with bias control to provide substantially constant responsivity of a photodetector

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

Semiconductor photonic devices using phase change materials

There is disclosed in one example a communication system, including: a data transmission interface; and a wavelength division multiplexing (WDM) silicon laser source to provide modulated data on a carrier laser via the data transmission interface, the WDM laser including a single laser cavity to generate an internally multiplexed multi-wavelength laser, the single laser cavity including a filter having a first grating period to generate a first wavelength and a second grating period to generate a second wavelength, the second grating period superimposed on the first grating period.

Multi-wavelength laser

Embodiments herein may relate to an optoelectronic receiver that includes a photonic integrated circuit (PIC) coupled with a light source. Respective PIC sections of the PIC may include a photodiode and a junction capacitor. The optoelectronic receiver may further include an electronic integrated circuit (EIC) coupled with the PIC. Respective EIC sections of the EIC may be communicatively coupled to respective ones of the PIC sections. Other embodiments may be described and/or claimed.

Distributed optoelectronic receiver

Embodiments herein relate to photonic integrated circuits with an on-chip optical isolator. A photonic transmitter chip may include a laser and an on-chip isolator optically coupled with the laser that includes an optical waveguide having a section coupled with a magneto-optic liquid phase epitaxy grown garnet film. In some embodiments, a cladding may be coupled with the garnet film, the on-chip isolator may be arranged in a Mach-Zehnder interferometer configuration, the waveguide may include one or more polarization rotators, and/or the garnet film may be formed of a material from a rare-earth garnet family. Other embodiments may be described and/or claimed.

On-chip optical isolator

Growing community of inventors

Pleasanton, CA, United States of America

Haisheng Rong