Sandisk Technologies Inc.

Fusion-Io, Inc.

Intelligent Intellectual Property Holdings 2 LLC

Hairong Sun

Jea Hyun

Robert Barry Wood

John Strasser

David Flynn

Jeremy David Fillingim

James G Peterson

Hao Zhong

Long C Pham

Kapil Verma

Rick Lucky

Ned Plasson

Warner Losh

Mark Brinicombe

Joshua Perschon

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. An integrated circuit chip comprising non-volatile memory, the integrated circuit chip configured to, determine a number of portions into which a storage operation is to be split; pause execution of the storage operation from within the integrated circuit chip according to the determined number of portions; execute one or more other storage operations on the integrated circuit chip while the storage operation is paused, each of the one or more other storage operations having a shorter duration than the storage operation; and continue the paused storage operation in response to a trigger.

Storage operation interrupt

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. A frequency module is configured to determine a frequency for pausing a storage operation. An interrupt module is configured to pause execution of a storage operation according to a determined frequency. A resume module is configured to continue a paused storage operation in response to a trigger.

Apparatuses, systems, methods, and computer program products are disclosed for model based configuration parameter management. An association module is configured to group a plurality of erase blocks of a non-volatile memory medium based on an amount of time since data has been written to the plurality of erase blocks. A read module is configured to sample data of at least two word lines from at least one erase block from each of a plurality of groups of erase blocks. A configuration parameter module is configured to determine different read voltage thresholds for different word lines of groups of erase blocks using different read voltage threshold models for different groups based on sampled data.

Model based configuration parameter management

Apparatuses, systems, and methods are disclosed for a read operation for a non-volatile memory. A method includes determining whether one or more non-volatile storage cells satisfy a predefined condition. A method includes preparing the one or more non-volatile storage cells for use prior to satisfying a read request from a storage client using the one or more non-volatile storage cells in response to determining that a predefined condition is satisfied.

Read operation for a non-volatile memory

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. An initialization module is configured to initialize a value for a configuration parameter for a set of cells of a non-volatile memory medium. The initialization module may initialize the configuration parameter value based on a predetermined model for the set of cells. An update module is configured to adjust the configuration parameter using an existing function of the non-volatile memory medium. The existing function may use the initialized value to adjust the configuration parameter. The update module may adjust the configuration parameter in response to a trigger. An access module is configured to access the set of storage cells using the adjusted configuration parameter.

Configuration parameter management using a configuration tool

Methods, storage controllers, and systems for non-volatile storage element programming are described. One method includes programming user data in pages associated with a set of wordlines of an erase block of a non-volatile, solid-state storage element. The method further includes selecting at least one of the wordlines of the set programmed with the user data and restricting further programming of user data in the pages associated with the selected wordline. In some embodiments, the selected wordline occurs subsequent to the pages associated with the other wordlines of the set in a page programming order for the erase block.

Apparatus, system, and method for non-volatile storage element programming

Apparatuses, systems, methods, and computer program products are disclosed for detecting voltage threshold drift. A method includes programming a predetermined pattern to one page of at least three pages of a set of memory cells. A pattern may have a configuration to reduce a number of bit transitions between abodes of a set of memory cells based on a coding scheme for the set of memory cells. A method includes reading data from a different page of at least three pages. A method includes determining a direction for adjusting a read voltage threshold for a set of memory cells based on read data.

Detecting voltage threshold drift

One method for improving the utility of solid-state storage media within a solid state storage device includes referencing one or more storage media characteristics for a set of storage cells of the solid-state storage media. The method also includes determining a configuration parameter for the set of storage cells based on the one or more storage media characteristics. The method includes configuring the set of storage cells to use the determined configuration parameter. The configuration parameter includes a parameter of the set of storage cells modifiable by a module external to the solid-state storage device by way of an interface. The module external to the solid-state storage device includes a device driver executing on a host device.

System, method, and apparatus for improving the utility of storage media

An apparatus, system, and method are disclosed for managing configuration parameters of a non-volatile storage device. The method includes storing a first set of configuration parameters for a non-volatile recording device. The first set of configuration parameters are configured for a storage operation on a storage element of the non-volatile recording device. The method also includes storing a second set of configuration parameters for the non-volatile recording device during execution of the storage operation on the storage element. The second set of configuration parameters are configured for a second storage operation on the storage element of the non-volatile recording device.

Managing configuration parameters for a non-volatile medium

A storage module is configured to determine a health metric of a storage division of a solid-state storage medium. The health metric may comprise a combination of factors, including, but not limited to: wear level, performance (e.g., program time, erase time, and the like), error rate, and the like. A wear level module may configure storage operations to reduce the wear rate of storage divisions having poor health metrics and/or heath metrics that are degrading more quickly than other storage divisions. Reducing wear rate may include deferring grooming operations, delaying use for storage operations, temporarily retiring the storage division, or the like. Storage divisions may be brought back into service at normal use rates in response determining that other portions of the storage media have been worn to the point that they exhibit similar health and/or reliability characteristics.

Apparatus, system, and method for wear management

An apparatus, system, and method are disclosed for managing erase operations for a data storage medium. A method includes determining whether a use threshold for one or more non-volatile storage cells is satisfied. A method includes performing a default erase operation for the one or more storage cells in response to determining that the use threshold is not satisfied. A method includes performing an extended erase operation for the one or more storage cells in response to determining that the use threshold is satisfied. An extended erase operation may include a greater number of erase pulse iterations than a default erase operation.

Periodic erase operation for a non-volatile medium

A memory device includes a memory array with a plurality of memory elements. Each memory element is configured to store data. The device includes an input/output (I/O) buffer coupled to the memory array. The I/O buffer is configured to receive data from an I/O interface of a memory device controller and write the data to the memory array. The device includes a memory control manager coupled to the memory array. The memory control manager is configured to pause a program operation to the memory array in response to receiving a pause command. The memory control manager is also configured to resume the program operation in response to receiving a resume command.

Program suspend/resume for memory

Apparatuses, systems, and methods are disclosed to manage non-volatile media. A method includes determining a configuration parameter for a set of storage cells of a non-volatile recording medium. A method includes reading data from a set of storage cells using a determined configuration parameter. A method includes adjusting a configuration parameter based on read data.

Managing non-volatile media

A method for adaptive voltage range management in non-volatile memory is described. The method includes establishing an adaptive voltage range for a memory element of an electronic memory device. The memory element includes at least two states. The adaptive voltage range comprises a lower state and an upper state. The method also includes establishing an adjustment process to implement a first adjustment of an abode characteristic of a first state and to implement a second adjustment of an abode characteristic of a second state in the adaptive voltage range in response to a trigger event, wherein the first adjustment of an abode characteristic of the first state is different from the second adjustment of an abode characteristic of the second state.

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Superior, CO, United States of America

Hairong Sun