Globalfoundries Singapore Pte. Ltd.

Haiqing Zhou

Pinghui Li

Ming Zhu

Wanbing Yi

Danny Pak-Chum Shum

Darin A Chan

Liying Zhang

Fan Zhang

Kin Leong Pey

Laiqiang Luo

Zhiqiang Teo

Fangxin Deng

Sen Mei

Xingyu Chen

Methods of forming a MTJ dummy fill gradient across near-active-MRAM-cell periphery and far-outside-MRAM logic regions and the resulting device are provided. Embodiments include providing an embedded MRAM layout with near-active-MRAM-cell periphery logic and far-outside-MRAM logic regions; forming a MTJ structure within the layout based on minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first and second metal layers; forming a high-density MTJ dummy structure in the near-active-MRAM-cell periphery logic region based on second minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer; and forming a low-density MTJ dummy structure in the far-outside-MRAM logic region based on third minimum space and distance rules relative to a first metal layer, a second metal layer, and/or both the first metal layer and the second metal layer.

Memory device with density-controllable dummy fill strategy for near-MRAM  periphery and far-outside-MRAM logic regions for embedded MRAM technology

A method of forming a uniform WL over the MCEL region and resulting device are provided. Embodiments include providing a substrate having a MCEL region, a HV region and a logic region, separated by an isolation region; forming a plurality of CG stacks over the MCEL region, and a plurality of CG dummy stacks over the HV region and the logic region, respectively; forming first and second overlying polysilicon layers with a spacer therebetween, an EG and a WL on the MCEL region formed; planarizing the second polysilicon layer down to upper surface of the plurality of CG stacks and the plurality of CG dummy stacks; and removing portions of the second polysilicon layer in-between the plurality of CG stacks and around the plurality of CG dummy stacks.

Control gate dummy for word line uniformity and method for producing the same

Density-controllable dummy fill strategy for near-MRAM periphery and far-outside-MRAM logic regions for embedded MRAM technology and method for producing the same

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Singapore, Singapore

Haiqing Zhou