Beijing Tongmei Xtal Technology Co., Ltd.

Haimiao Li

Sung-Nee George Chu

Liugang Wang

Yu Liu

Wei Gao

Zhizhen Wang

The present invention provides a method for detecting surface haze of materials, comprising: optionally, preliminary inspection, which is conducted on materials, to identify the materials with no visible surface defects; and surface haze inspection, to detect the surface haze of the materials; wherein an optical filter module is configured in surface haze inspection setup to filter off the photoluminescence signal of the materials in the light path to the detector, so as to avoid the photoluminescence signal being detected by the detector. The invention further provides a setup for detecting surface haze of materials. By using the invented method and setup for detecting surface haze, it is possible to accurately obtain the surface haze value and/or distribution of the materials.

Method and setup for detecting surface haze of materials

A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.

Indium phosphide (InP) wafer having pits of olive-shape on the back side, method and etching solution for manufacturing the same

A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 &#x3bc;m, and the pits have a maximum depth of 6.0 &#x3bc;m. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.

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Beijing, China

Haimiao Li