Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Donghua University

Shanghai Academy of Agricultural Sciences

Shanghai Huiyi New Materials Technology Co., Ltd.

Zhejiang Ruishengke New Materials Research Institute Co., Ltd.

Xinfengming Group Co., Ltd.

Huzhou Zhongyue Chemical Fiber Co., Ltd.

New Fengming Group Huzhou Zhongshi Technology Co., Ltd.

Shaoxing Huiqun New Material Technology Co., Ltd.

Hailong Yu

Xuezhen Jing

Hao Kai Zhang

Tiantian Zhang

Jingjing Tan

Yu Meng Li

Feng Zhou

Dan Zhang

Hui Calvin Yang

Bin Sun

Heng Zhang

Zhangru Xiao

Zhen Xu

Lujun Zhang

Ning Jiang

Jianyu Liu

Xiaodong Shang

Ruijuan Wang

Meiyan Zhang

Wen Guo

Jinhui Meng

Zheyuan Tong

Chunyan Song

Li Cui

Xingqi Hu

Qi Tan

Yaozhong Zhuang

Hong Shen

Weidong Zhan

Qiaozhen Li

A method of preparing an antibacterial anti-yellowing ZnO antimony-free polyester fiber is provided. In direct spinning of antimony-free polyester melt, an anti-yellowing nano antibacterial agent is introduced into a polymerization process of antimony-free polyester to obtain the antibacterial anti-yellowing ZnO antimony-free polyester fiber; the anti-yellowing nano antibacterial agent is a surface-deposited or coated nano ZnO of a phosphate ester small molecule having a function of resisting thermal oxidative degradation, the phosphate ester small molecule is bound to the nano ZnO by van der Waals force, hydrogen bonding or covalent bonding, and the phosphate ester small molecule is a phosphate ester molecule with a molecular weight of less than 500 Da; the content of the nano ZnO in the antibacterial anti-yellowing ZnO antimony-free polyester fiber is not lower than 1.2 wt %, and the yellowing index Yi value of the antibacterial anti-yellowing ZnO antimony-free polyester fiber is not higher than 16.1.

Method of preparing antibacterial anti-yellowing ZnO antimony-free polyester fiber

A semiconductor device and method for forming same are provided. The method for forming a semiconductor device includes: providing a base; forming an interlayer dielectric layer over the base; forming contact holes by etching the interlayer dielectric layer; forming a barrier layer over the base in the contact holes; and forming a metal layer over the barrier layer. The contact holes exposed a portion of a surface of the base. The metal layer fully filled the contact hole.

Semiconductor device and method for forming the same

A semiconductor structure and a fabrication method of the semiconductor structure are provided. The method includes providing a substrate, forming a first dielectric layer and a plurality of gate structures, forming source-drain doped regions, and forming a source-drain plug. The first dielectric layer covers surfaces of the gate structure, the source-drain doped region and the source-drain plug. The method also includes forming a first plug in the first dielectric layer, and forming a second dielectric layer on the first dielectric layer. The first plug is in contact with a top surface of one of the source-drain plug and the gate structure. The second dielectric layer covers the first plug. Further, the method includes forming a second plug material film in the first and second dielectric layers. The second plug material film is in contact with the top surface of one of the source-drain plug and the gate structure.

Semiconductor structure and fabrication method thereof

A semiconductor structure and its fabrication method are provided. The method includes: providing a substrate and a first metal layer in the substrate; forming a dielectric layer with a first opening exposing a portion of a top surface of the first metal layer on the substrate; bombarding the portion of the top surface of the first metal layer exposed by the first opening, by using a first sputtering treatment, to make metal materials on the top surface of the first metal layer be sputtered onto sidewalls of the first opening to form a first adhesion layer; and forming a second metal layer on a surface of the first adhesion layer and on the exposed portion of the top surface of the first metal layer using a first metal selective growth process.

A method for forming a semiconductor structure includes providing an initial semiconductor structure formed in a substrate; forming a dielectric layer on the substrate; forming a first opening in the dielectric layer to expose a portion of the initial semiconductor structure; etching the portion of the initial semiconductor structure exposed at a bottom of the first opening to form a second opening in the initial semiconductor structure; and forming a contact layer in the second opening and a third opening in the contact layer. The contact layer has a concave top surface, and the third opening is located above the concave top surface of the contact layer and under the first opening. The method further includes forming a conductive structure in the first opening and the third opening.

Semiconductor structure and formation method thereof

A method for genetic transformation of edible mushrooms is provided relating to the technical field of genetic transformation of, enoki mushroom and shiitake. The disclosed method for genetic transformation ofincludes: inoculatingliquid mycelia into a foxtail-millet-grain culture medium, and pre-culturing them at 20-25&#xb0; C. untilmycelia grow on surfaces of foxtail millet grains. This method uses the foxtail millet grains as an attachment matrix, and during the pre-culturing and co-culturing, the culture substrate is shaken up every day. The method for genetic transformation of enoki mushroom or shiitake includes: inoculation of enoki mushroom mycelia or shiitake mycelia, activated culturing of, andinfecting a foxtail millet grain-enoki mushroom mycelium matrix or a foxtail millet grain-shiitake mycelium matrix.

Method for genetic transformation of edible mushrooms

Growing community of inventors

Shanghai, China

Hailong Yu