Qorvo Us, Inc.

Triquint Semiconductor Corporation

Hailin Han

Ezio Perrone

Steven Alexander Brown

Christopher Robert Moll

Robert Edwin Knapp

Stephen P Bachhuber

An RF PA and an RF PA protection circuit are disclosed according to one embodiment of the present disclosure. The RF PA includes an RF PA bias circuit and an RF PA transistor element. The RF PA transistor element has a first current terminal and a control terminal. The RF PA protection circuit is coupled between the RF PA bias circuit and the first current terminal. The RF PA protection circuit reduces a current through the first current terminal using the RF PA bias circuit when a magnitude of a voltage at the first current terminal exceeds a protection threshold.

Protection circuit for an RF power amplifier

A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.

Split biased radio frequency power amplifier with enhanced linearity

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Oak Ridge, NC, United States of America

Hailin Han