Hefechip Corporation Limited

Haijiang Yuan

John H Zhang

Huang Liu

Liang Li

Yanzun Li

Chunyu Wong

Chung-Chiang Lin

Yuan Lung Lin

A semiconductor structure and a method of forming it are disclosed by the present application. Deep trench capacitors are formed in a substrate, and fin contacts formed by upper portions of inner electrodes in the deep trench capacitors are connected to fins on a surface of the substrate. At least one of word lines formed on the substrate pass over and are separated by a word line isolation layer from the inner electrodes. The word line isolation layer covers portions of the inner electrodes between a buried oxide layer and the fin contacts, while the fins are exposed therefrom.

Semiconductor structure and forming method thereof

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Shanghai, China

Haijiang Yuan