Zhuzhou Crrc Times Electric Co., Ltd

Dynex Semiconductor Limited

Zhuzhou Crrc Times Semiconductor Co. Ltd.

Haihui Luo

Guoyou Liu

Jianwei Huang

Yangang Wang

Yafei Wang

Chengzhan Li

Xiaoping Dai

Changwei Zheng

Rongzhen Qin

Haibo Xiao

Shasha Jiao

Yongdian Peng

Han Li

Wenhao Zhang

Yuqi Wang

Qiang Kang

Guiqin Chang

Tingchang Shi

Guozhong Dong

A cell structure of a silicon carbide MOSFET device, comprising a drift region () located on a substrate layer (), a second conducting type well region () and a first JFET region () that are located in the drift region (), an enhancement region located within a surface of the well region (), a gate insulating layer () located on a first conducting type enhancement region (), the well region () and the first JFET region () and being in contact therewith at the same time, a gate () located on the gate insulating layer, source metal () located on the enhancement region, Schottky metal () located on a second conducting type enhancement region () and the drift region (), a second JFET region () located on a surface of the drift region () between the Schottky metals (), and drain metal ().

Cell structure of silicon carbide MOSFET device, and power semiconductor device

We herein describe a semiconductor device sub-assembly comprising at least two power semiconductor devices and a contact of a first type. A first power semiconductor device is located on a first side of the contact of a first type, and a second power semiconductor device is located on a second side of the contact of a first type, where the second side is opposite to the first side.

High power density 3D semiconductor module packaging

Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Insulated gate bipolar transistor and preparation method therefor

A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a semiconductor structure including an IGBT cell region and a fast recovery diode cell region which are separated from each other, a copper electrode layer on an upper surface of the IGBT cell region; performing ion implantation on the semiconductor structure by using the copper electrode layer as a barrier layer, for controlling minority carrier lifetime of the fast recovery diode cell region; and forming a metal electrode layer on an upper surface of the fast recovery diode cell region, where the metal electrode layer is electrically connected to the copper electrode layer on the upper surface of the IGBT cell region.

Reverse conducting IGBT device and manufacturing method therefor

Growing community of inventors

Hunan, China

Haihui Luo