Yangtze Memory Technologies Co., Ltd.

Haihui Huang

Zhiliang Xia

Zongliang Huo

Baoyou Chen

Fandong Liu

Jia He

Yaobin Feng

Yaohua Yang

Peizhen Hong

Qingchen Cao

Meng Wang

Zhen Fang

Er Jiang Xu

Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Openings layout of three-dimensional memory device

A method for reducing an epitaxial growth loading effect in a patterned device includes forming a first trench and a second trench in a substrate and in a first insulating layer over the substrate to form a low pattern density region and a high pattern density region. The first trench has a larger cross-sectional area than the second trench. The method further includes isolating the first trench from the second trench by using a first mask. The method further include disposing a second insulating layer in the first trench. The method further includes removing a portion of the first mask in order to expose the second trench. The method further includes growing an epitaxial layer in the second trench.

Methods for solving epitaxial growth loading effect at different pattern density regions

The present disclosure describes methods and patterned devices for reducing a loading effect between a low pattern density region and a high pattern density region. The patterned device includes a substrate, a first insulating layer over the substrate, a low pattern density region, a high pattern density region, a second insulating layer, and an epitaxial grown layer. The low pattern density region includes a first trench in the first insulating layer and the substrate. The high pattern density region includes a second trench in the first insulating layer and the substrate. The second insulating layer is formed in the first trench. The epitaxial grown layer is formed in the second trench. The first trench has a larger cross-sectional area than the second trench.

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Hubei, China

Haihui Huang