Shanghai Huali Integrated Circuit Corporation

Haihua Zou

Tao Liu

Qiwei Wang

Qi Cheng

Zhenxing Yang

The present application discloses an integrated structure of MOS transistors having different working voltages. A second spacer of a second MOS transistor having a middle second working voltage is formed by adding a third sub-spacer on the basis of a first spacer of a first MOS transistor having a relatively low first working voltage, and the first spacer is formed by stacking a first sub-spacer and a second sub-spacer. The thickness of the second spacer is adjusted via the third sub-spacer, so as to ensure that a GIDL leakage of the second MOS transistor under the second working voltage satisfies a requirement. The present application also discloses a method for manufacturing an integrated structure of MOS transistors having different working voltages.

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Shanghai, China

Haihua Zou