Fuji Electric Co., Ltd.

Kyushu University

Haigui Yang

Hitoshi Sumida

Hiroshi Nakashima

A method of manufacturing a semiconductor device according to the invention includes the step Sof cleaning the silicon carbide substratesurface, the step Sof bringing a material gas into a plasma and irradiating the atoms contained in the material gas to silicon carbide substratefor growing silicon nitride filmon silicon carbide substrate, the step Sof depositing silicon oxide filmon silicon nitride filmby the ECR plasma CVD method, and the step Sof annealing silicon carbide substrateincluding silicon nitride filmand silicon oxide filmformed thereon in a nitrogen atmosphere. By the method of manufacturing a semiconductor device according to the invention, a semiconductor device that exhibits excellent interface properties including an interface state density and a flat band voltage is obtained.

Growing community of inventors

Changchun, China

Haigui Yang