Shanghai Huali Microelectronics Corporation

Other

Advanced Micro Devices Corporation

Agere Systems Inc.

Advanced Micro Devices (shanghai) Co., Ltd.

HaiFeng Zhou

Jun Tan

Runling Li

Yu Bao

Jun Zhou

Bin Zhong

Wen Zhu

Jingxun Fang

Yongyue Chen

Tong Lei

Jinsong Liu

Yingming Liu

Xiaoqiang Zhou

Qiangao Xu

A bi-directional Gray code counter includes a first set of logic circuitry configured to receive an input having a first sequence of bits representing a first value. The first set of logic circuitry is further configured to convert the first sequence of bits to a second sequence of bits representing the first value. The bi-directional Gray code counter further includes a second set of logic circuitry and third second set of logic circuitry. The second set of logic circuitry is configured to compare the second sequence of bits to a bit index pattern. The third set of logic circuitry is configured to transition one bit in the first sequence of bits from a first state to a second state to form a third sequence of bits representing a second value. The one bit is transitioned in response to the second sequence of bits being compared to the bit index pattern.

Direct bi-directional gray code counter

Semiconductor devices including semiconductor junctions and semiconductor field effect transistors that exploit the straining of semiconductor materials to improve device performance are provided. Also described are methods for making semiconductor structures. Dislocation defect-free epitaxial grown structures that are embedded into a semiconductor base are provided. The epitaxial structures can extend beyond the surface of the semiconductor base and terminate at a faceted structure. The epitaxial structures are formed using a multilayer growth process that provides for continuous transitions between adjacent layers.

Methods and systems for reducing dislocation defects in high concentration epitaxy processes

The present disclosure addresses and solves the current problem of oxygen accumulation in IL after an HKMG stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one Titanium (Ti) layer between multiple HK layers. A high-k/metal gate semiconductor device including at least one TiO2 layer between multiple HK layers is also provided.

Method for avoiding IL regrown in a HKMG process

One aspect of the present disclosure is a method of fabricating metal gate by forming special layers in place of traditional TiN hard mask over the ILD0 layer to avoid ILD0 losses due to conventional ILD0 CMP. The method can comprise: after the ILD0 CMP, forming a first thin ashable film layer over the ILD0 layer; then forming a second thin dielectric layer over the first layer; during the aluminum CMP process for a first region (PMOS or NMOS), removing the second layer through polishing until the top surface of the first ashable film layer; and then removing first ashable film layer through an ashing method such as burning. In this way, ILD0 loss can be reduced during the first aluminum CMP step and thus can reduce initial height of ILD0, which in turn can reduce the height of initial dummy gate filled in the cavity.

Fabrication technology for metal gate

Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench. A silicon-germanium compound is deposited into the first trench and the second trench, and a test pad is removed from the test area of the wafer. The test pad includes a side surface where both the first trench and the second trench are exposed. The side surface of the test pad is scanned with a transmission electron microscope to take measurements of the silicon-germanium.

Embedded SiGe epitaxy test pad

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a diamond-shaped cavity, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.

Shaped cavity for SiGe filling material

A method of removing a dummy gate dielectric layer is provided. Firstly a first plasma containing F is utilized to remove the dummy dielectric layer which contains Si and O. Then a second plasma containing His utilized to remove fluorine compound on the surface of the semiconductor substrate. Since the fluorine residue formed after the first plasma treatment reacts with the second plasma to form a gaseous product HF, the fluorine element can be taken away from the semiconductor device with the HF, which prevents inversion layer offset and gate current leakage occurred in the subsequent processing steps due to the fluorine element.

Method of removing dummy gate dielectric layer

The invention discloses a treatment process for a semiconductor, comprising providing a substrate; defining a trench opening region of the substrate; performing plasma etching to form a trench region at the trench opening region; subjecting the substrate to a first epitaxial process with a first plurality of gaseous species to form a protective layer overlaying at least the first sidewall and the bottom of the trench region; and subjecting the substrate and the protective layer to a second epitaxial process with a second plurality of gaseous species to form a filling material overlaying the protective layer and being positioned at least partially within the trench region. The invention further provides a semiconductor processing technique used to eliminate or reduce dislocation defect on the semiconductor device and improve device performance. In the treatment process, at least one epitaxial process to form the protective layer overlaying at least the first sidewall and the bottom of the trench region corresponds to form a filling material overlaying the protective layer and being positioned at least partially within the trench region.

Methods and systems for using conformal filling layers to improve device surface uniformity

A method of transitioning a port in a communication system from an active state to a standby state includes the steps of transmitting a signal to transition the port to the standby state, and, upon transmission of the signal to transition the port to the standby state, transitioning the port from the active state into the standby state without entering a suspended state. The port may be a physical layer interface port and the communication system may be an IEEE 1394-compliant communication system.

Growing community of inventors

Shanghai, China

HaiFeng Zhou