Hebei University

Haidong He

Xiaobing Yan

Zhen Zhao

A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiOlayer, a LaSrMnOlayer, and a (BaTiO)—(CeO)layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO, a second layer of LaSrMnO, and a third layer of (BaTiO)—(CeO)(in which an atomic ratio of BaTiOto CeOis 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiOcan reach 40 nm.

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Baoding, China

Haidong He