Asml Netherlands B.v.

Asml Holding N.v.

Haico Victor Kok

Marcus Adrianus Van De Kerkhof

Bearrach Moest

Robbert Jan Voogd

Johannes Jacobus Matheus Baselmans

Timotheus Franciscus Sengers

Borgert Kruizinga

Marc Antonius Maria Haast

Koen Kivits

Ron Van De Laak

Torsten Harzendorf

Patricius Aloysius Jacobus Tinnemans

Johannes Henricus Wilhelmus Jacobs

Thibault Simon Mathieu Laurent

Mark Kroon

Jan Steven Christiaan Westerlaken

Yuri Johannes Gabriël Van De Vijver

Jan Evert Van Der Werf

Gerbrand Van Der Zouw

Igor Matheus Petronella Aarts

Johannes Hubertus Antonius Van De Rijdt

Bastiaan Andreas Wilhelmus Hubertus Knarren

Allard Eelco Kooiker

Martijn Gerard Dominique Wehrens

Arie Johan Van Der Sijs

Johannes Maria Kuiper

Johannes Antonius Maria Van De Wal

Peter Werner Weissbrodt

Yohann Bruno Yvon Teillet

Wilhelmina Margareta Jozef Hurkens-Mertens

Manfred Schrenk

Arie Jeffrey Den Boef

Simon Gijsbert Josephus Mathijssen

Kaustuve Bhattacharyya

Sebastianus Adrianus Goorden

Tammo Uitterdijk

Wilhelmus Petrus De Boeij

Sherman K Poultney

Stoyan Nihtianov

Ralph Brinkhof

Hoite Pieter Theodoor Tolsma

Hendrikus Robertus Marie Van Greevenbroek

Henricus Johannes Lambertus Megens

Stefan Carolus Jacobus Antonius Keij

Eric Brian Catey

Petrus Franciscus Van Gils

Kevin J Violette

William Peter Van Drent

Wilhelmus Maria Corbeij

Michel Fransois Hubert Klaassen

Wilhelmus Jacobus Maria Rooijakkers

Michel François Hubert Klaassen

Leendert Jan Karssemeijer

Samee Ur Rehman

Jacob Sonneveld

Robbert-Jan Voogd

Peter Weissbrodt

Hans Kuiper

Hoite P Theodoor Tolsma

Manfred Helmut Gustav Wilhelm Johannes Schrenk

Hendikus Robertus Marie Van Greevenbroek

Leon Van Dooren

A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Metrology method and associated metrology and lithographic apparatuses

The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.

Sensor, lithographic apparatus, and device manufacturing method

A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.

Measurement method comprising in-situ printing of apparatus mark and corresponding apparatus

A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.

Sensor, lithographic apparatus and device manufacturing method

A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Lithographic method to apply a pattern to a substrate and lithographic apparatus

A sensor system to measure a physical quantity, the system including a parallel detection arrangement with multiple detectors to allow measurements in parallel at different spatial locations, wherein the multiple detectors share a noise source, wherein the sensor system is configured such that the multiple detectors each output a signal as a function of the physical quantity, and wherein the sensor system is configured such that at least one detector responds differently to noise originating from the shared noise source than the one or more other detectors.

Sensor system for lithography

A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

Sensor and lithographic apparatus

A lithographic apparatus includes an illumination system, support constructed to support patterning device, a projection system, an interferometric sensor and a detector. The interferometric sensor is designed to measure one or more wavefronts of a radiation beam projected by the projection system from an adjustable polarizer. The interferometric sensor includes a diffractive element disposed at a level of a substrate in the lithographic apparatus and a detector spaced apart from the diffractive element, the diffractive element being arranged to provide shearing interferometry between at least two wavefronts mutually displaced in a direction of shear. The detector is designed to determine, from the wavefront measurements, information on polarization affecting properties of the projection system.

Lithographic apparatus and a method for determining a polarization property of a projection system using an adjustable polarizer and interferometric sensor

A lithographic apparatus comprising an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate, wherein the lithographic apparatus further comprises a patterning device masking blade provided with a hole, a diffusing material being located at the hole.

Lithographic apparatus and method

A sensor for use at substrate level in a high numerical aperture lithographic apparatus, the sensor having a transparent plate that covers a sensing element and includes elements that improve coupling of radiation into the sensing element. The improved coupling elements include a flowing liquid medium disposed between the transparent plate and the sensing element.

Lithographic apparatus and sensor therefor

Disclosed is a method of determining higher order distortions of a patterning device of a lithographic apparatus, and associated apparatus. The higher order distortions are measured using the transmission imaging device. In a main embodiment, enhanced reticles are used which may have additional alignment gratings in the perimeter, in the scribe lanes of the image field or in the image field itself.

Lithographic apparatus and device manufacturing method

Growing community of inventors

Eindhoven, Netherlands

Haico Victor Kok