Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

China Unionpay Co., Ltd.

Semiconductor Manufacturing (shanghai) International Corporation

Semiconductor Manufacturing (beijing) International Corporation

Smic Advanced Technology Research & Development (shanghai) Corp.

Imec International

Hai Zhao

Yang Liu

Jie Li

Shaofeng Yu

Yanming Yang

Gang Mao

YongMeng Lee

Jijing Hu

Cheng-Jui Yang

Mingming Gan

Lijuan Du

This application provides a data storage method which is applied to a data storage device and includes: acquiring a first user identification and first user data of a first user; determining, from at least two preset distributed hosts in different areas, a first identification distributed host corresponding to the first user identification and a first data distributed host corresponding to the first user data; sending the first user identification to the first identification distributed host, so that the first identification distributed host stores the first user identification, and generates and stores a first identity identification corresponding to the first user identification; receiving the first identity identification; and sending the first identity identification and the first user data to the first data distributed host, so that the first data distributed host stores them in an associated manner.

Data storage method, apparatus, device and storage medium using distributed hosts for user identifications

A semiconductor apparatus and its manufacturing method are presented. The method entails providing a substrate structure comprising a substrate, one or more fins positioned along a first direction on the substrate, and a separation region surrounding the fins. The separation region comprises a first separation region neighboring a first side of the fins and a second separation region neighboring a second side of the fins; forming a first and a second insulation layers on the substrate structure; forming a barrier layer; performing a first etching process using the barrier layer as a mask; removing the barrier layer; performing a second etching process using the remaining second insulation layer as a mask; forming a third insulation layer on side surfaces of the remaining first and second insulation layers; and performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask.

Semiconductor apparatus and manufacturing method

The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor apparatus and manufacturing methods for the same. In some implementations, a method may include: providing a substrate structure which includes: a substrate, one or more fins located on the substrate and extending along a first direction, and an isolation region located around one of the fins, an upper surface of the isolation region being lower than an upper surface of the fin, the isolation region including a first isolation region and a second isolation region, where the first isolation region is located on a side surface of the fin that is in the first direction, and the second isolation region is located on a side surface of the fin that is in a second direction that is different from the first direction; forming, on the substrate structure, a sacrificial layer having an opening, the opening exposing an upper surface of the first isolation region and exposing a part, which is located above the first isolation region, of the side surfaces of the fin adjacent to the first isolation region; filling the opening with an insulating material to form a third isolation region on the first isolation region, an upper surface of the third isolation region being higher than the upper surface of the fin; and removing the sacrificial layer.

Semiconductor apparatus and manufacturing method for same

The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor. The semiconductor device includes a substrate; two fins located on the substrate and extending along a first direction; an isolation material layer surrounding the fins, comprising a first isolation regions located at an end region between the two fins along the first direction, and a second isolation region located at sides of the fins along a second direction that is different from the first direction, wherein an upper surface of the first isolation region substantially align with an upper surfaces of the fins, and an upper surface of the second isolation region is lower than the upper surface of the fins; and a first insulating layer on the first isolation region.

Method for manufacturing a semiconductor device having a fin located on a substrate

A method of fabricating a semiconductor device includes: providing a semiconductor substrate including a hard mask layer; performing, using the hard mask layer, etching to the semiconductor substrate to form a fin-type structure and a groove; forming an isolation material layer in the regions between adjacent fins of the fin-type structure and in the groove; removing a portion of the isolation material layer that is located above the hard mask layer to form a shallow trench isolation; and forming a second mask layer over the hard mask layer, the second mask layer having an opening above the shallow trench isolation; performing ion implantation to the shallow trench isolation through the opening; removing the second mask layer and the hard mask layer; and removing a portion of the isolation material layer located in the regions between adjacent fins of the fin-type structure and a portion of the shallow trench isolation.

Technique of reducing shallow trench isolation loss during fin formation in finFETs

Growing community of inventors

Shanghai, China

Hai Zhao