Samsung Electronics Co., Ltd.

Hai-sub Na

Hyun-woo Kim

Kyoung-seon Kim

Jin Su Park

Han-Ku Cho

Su-Min Park

Chil-Hee Chung

Hyo-Jin Yun

So-Ra Han

Su-Min Kim

Yool Kang

Seong-woon Choi

Hyun-Chul Yoon

Jeong-ju Park

Ju-Young Kim

Kyoung-taek Kim

Min-Ju Park

Hak-won Kim

Weoun-ju Kim

A rinse solution includes a surfactant and deionized water. The surfactant includes a compound having a branched structure, the compound having a branched structure including a hydrophobic group-containing main chain and a plurality of side chains that are branched from the main chain and have at least one hydrophilic functional group. A method of fabricating an integrated circuit device includes forming a photoresist pattern, followed by applying the rinse solution onto the photoresist pattern.

Rinse solution and method of fabricating integrated circuit device by using the same

A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

Method of manufacturing semiconductor device

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Method of forming micropatterns

Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/&#x3bc;m or greater with respect to 193-nm incident light.

Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method

A photoacid generator represented by Formula 1 or Formula 2: wherein R, R, and Rare each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S, and at least one CHgroup in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R&#x2014;SA, where Ris a C1-C10 alkyl group, and Ais a counter-ion.

Photoacid generator, chemically amplified resist composition including the same, and associated methods

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Seoul, South Korea

Hai-sub Na