Taiwan Semiconductor Manufacturing Comp. Ltd.

Hai-Ming Chen

Chi-Yang Yu

Chien-Hsun Lee

Jung Wei Cheng

Yu-Min Liang

Tsung-Ding Wang

Chin-Liang Chen

Kuan-Lin Ho

Hao-Cheng Hou

Hung-Jen Lin

Chun-Chih Chuang

Ming-Che Liu

Yu-min Liang

Wei-Ting Lin

Jiun-Yi Wu

Yu-Chih Liu

Nien-Fang Wu

Jing Ruei Lu

A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a redistribution layer, a semiconductor die, conducting connectors, dummy bumps and an underfill. The semiconductor die is disposed on a top surface of the redistribution layer and electrically connected with the redistribution layer. The conducting connectors are disposed between the semiconductor die and the redistribution layer, and are physically and electrically connected with the semiconductor die and the redistribution layer. The dummy bumps are disposed on the top surface of the redistribution layer, beside the conducting connectors and under the semiconductor die. The underfill is disposed between the semiconductor die and the redistribution layer and sandwiched between the dummy bumps and the semiconductor die. The dummy bumps are electrically floating. The dummy bumps are in contact with the underfill without contacting the semiconductor die.

Package structure and manufacturing method thereof

An integrated fan-out package includes a die, an encapsulant, a seed layer, a conductive pillar, a redistribution structure, and a buffer layer. The encapsulant encapsulates the die. The seed layer and the conductive pillar are sequentially stacked over the die and the encapsulant. The redistribution structure is over the die and the encapsulant. The redistribution structure includes a conductive pattern and a dielectric layer. The conductive pattern is directly in contact with the seed layer and the dielectric layer covers the conductive pattern and surrounds the seed layer and the conductive pillar. The buffer layer is disposed over the redistribution structure. The seed layer is separate from the dielectric layer by the buffer layer, and a Young's modulus of the buffer layer is higher than a Young's modulus of the dielectric layer of the redistribution structure.

Integrated fan-out package and manufacturing method thereof

Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.

Connector formation methods and packaged semiconductor devices

An embodiment method includes encapsulating a semiconductor die in an encapsulant, planarizing the encapsulant, and depositing a polymer material on the encapsulant. The method further includes planarizing the polymer material and forming a metallization pattern on the polymer material. The metallization pattern electrically connects a die connector of the semiconductor die to a conductive feature disposed outside of the semiconductor die.

Planarization of semiconductor packages and structures resulting therefrom

An integrated fan-out package includes a die, an encapsulant, a redistribution structure, a seed layer, conductive pillars, and a buffer layer. The encapsulant encapsulates the die. The redistribution structure is over the die and the encapsulant. The redistribution structure includes dielectric layers and conductive patterns. The dielectric layers are sequentially stacked and the conductive patterns are sandwiched between the dielectric layers. The seed layer and the conductive pillars are sequentially stacked over the redistribution structure. The seed layer is directly in contact with the conductive patterns closest to the conductive pillars. The buffer layer is disposed over the redistribution structure. The dielectric layer closest to the conductive pillars and the buffer layer are sandwiched between the seed layer and the conductive patterns closest to the conductive pillars. A Young's modulus of the buffer layer is higher than a Young's modulus of each of the dielectric layers of the redistribution structure.

An integrated fan-out package includes a die, an encapsulant, a redistribution structure, a plurality of conductive pillars, a seed layer, and a plurality of conductive bumps. The encapsulant encapsulates the die. The redistribution structure is over the die and the encapsulant. The redistribution structure is electrically connected to the die and includes a plurality of dielectric layers that are sequentially stacked and a plurality of conductive patterns sandwiched between the dielectric layers. A Young's modulus of the dielectric layer farthest away from the die is higher than a Young's modulus of each of the rest of the dielectric layers. The conductive patterns are electrically connected to each other. The conductive pillars are disposed on and electrically connected to the redistribution structure. The seed layer is located between the conductive pillars and the redistribution structure. The conductive bumps are disposed on the plurality of conductive pillars.

A method includes bonding a first device die onto a top surface of a package substrate, and performing an expose molding on the first device die and the package substrate. At least a lower portion of the first device die is molded in a molding material. A top surface of the molding material is level with or higher than a top surface of the first device die. After the expose molding, a second device die is bonded onto a top surface of the first device die. The second device die is electrically coupled to the first device die through through-silicon vias in a semiconductor substrate of the first device die.

Packages with die stack including exposed molding underfill

Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer with a pattern for a first portion of a connector. A first metal layer is plated through the patterned first photoresist layer to form the first portion of the connector which has a first width. A second photoresist layer is formed over the interconnect structure and the first portion of the connector. The second photoresist layer is patterned with a pattern for a second portion of the connector. A second metal layer is plated through the patterned second photoresist layer to form the second portion of the connector over the first portion of the connector. The second portion of the connector has a second width, the second width being less than the first width.

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Kaohsiung, Taiwan

Hai-Ming Chen