Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Hai Fang Zhang

Xuan Jie Liu

Chong Wang

Jue Lu

Guo Feng Yao

An image sensor includes a substrate having a first surface and a second surface. The substrate includes a photo-sensitive region and a connection region. The image sensor also includes a buffer layer formed on the first surface of the substrate in the photo-sensitive region, and a metal grid formed on the buffer layer and including a plurality of staggered metal wires. The metal grid is connected to an operation voltage, and a plurality of trenches are formed in the metal grid with each trench surrounded by the metal wires. The image sensor further includes a plurality of color filters formed in the plurality of trenches of the metal grid. The metal grid induces charges in the substrate to prevent recombination between the charges generated by photo-sensitive components and the defects in the substrate. As such, the dark current is reduced, and the performance of the image sensor is improved.

Image sensors, and fabrication and operation methods thereof

A packaging structure and a packaging method are provided. The packaging structure includes a carrier semiconductor structure including a carrier substrate, a carrier dielectric layer, and a carrier top conductive layer inside the carrier dielectric layer and having a top exposed by the carrier dielectric layer. The packaging structure also includes a top semiconductor structure including a top substrate, a first dielectric layer, a zeroth conductive layer, and a second dielectric layer, wherein a position of the zeroth conductive layer corresponds to a position of the carrier top conductive layer. Further, the packaging structure includes a conductive plug formed on one side of the zeroth conductive layer, and penetrating through the top substrate, the first dielectric layer, and the second dielectric layer, wherein the conductive plug is electrically connected to each of the zeroth conductive layer and the carrier top conductive layer.

Growing community of inventors

Shanghai, China

Hai Fang Zhang