Basf Se Corporation

Wayne State University

Georg-august-universität Göttingen

Hagen Wilmer

Cornelia Katharina Dobner

Frank Rosowski

Daniel Loeffler

Hans-Martin Allmann

Thomas Lautensack

Kerstin Schierle-Arndt

Jürgen Zühlke

Torben Adermann

Falko Abels

Carolin Limburg

Klaus Joachim Mueller-Engel

Rocco Paciello

Thomas Schaub

Holger Borchert

Andreas Raichle

Ulrich Cremer

Felix Eickemeyer

Charles H Winter

Klaus Joachim Müller-Engel

Sabine Weiguny

Andrey Karpov

Stefan Altwasser

Julia Strautmann

Jan Gerkens

Sven Schneider

Hermann Petersen

Sean T Barry

Bastian Ewald

Sinja Verena Klenk

Nilanka Weerathunga Sirikkathuge

Florian Blasberg

Christine Schmitt

Florian Hering

Alexander Georg Hufnagel

Daniel Löffler

Horst Strahberger

Monica Gill

Matthew Griffiths

Robert Wolf

Christian Roedl

Philipp Bueschelberger

Christian Volkmann

Udo Radius

Johannes Berthel

Matthias Reiners

Daniel LÖFFLER

Philipp BÜSCHELBERGER

Séan Barry

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR, PR, OR, SR, CR, SiR, X is H, R' or NR′, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Process for the generation of metal- or semimetal-containing films

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, Ris an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, Ris an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

Process for the generation of thin inorganic films

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R, R, R, and Rare independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol. 

Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol stateL- - - M - - - X&#x2003;&#x2003;(I)and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, whereinM is a metal,L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond,X is a ligand which coordinates to M,n is 1 to 5, andm is 0 to 5.

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R, Rare an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R, R, and Rare an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3. 

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein Rand Rare independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R, R, Rand Rare independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4. 

A process of bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R, R, R, R, R, R, R, Rare independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R, R, R, Rare independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition containing vanadium, phosphorus and oxygen. The shaped catalyst body has an essentially cylindrical body having a longitudinal axis. The cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.

Catalyst and method for producing maleic anhydride

The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition contains vanadium, phosphorus and oxygen, where the shaped catalyst body has an essentially cylindrical body having a longitudinal axis, wherein the cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.

The present invention relates to a process for gas-phase oxidation, in which a gaseous stream comprising an aromatic hydrocarbon and molecular oxygen is passed through two or more catalyst zones. Furthermore, the present invention relates to a catalyst system for gas-phase reaction using a preliminary zone.

Catalyst system and method for gas phase oxidation using an upstream layer

A process for charging a reactor with a fixed catalyst bed which comprises at least one annular shaped support catalyst body K, in which, before the charging, fragments formed in the preparation of the shaped catalyst bodies K are removed by screening.

Process for charging a reactor with a fixed catalyst bed which comprises at least annular shaped catalyst bodies K

What is described is a process for starting up a gas phase oxidation reactor for oxidation of o-xylene to phthalic anhydride, said reactor comprising at least one catalyst layer and being temperature-controllable by means of a heat carrier medium, wherein a) the catalyst layer is interrupted by a moderator layer which is less catalytically active than the catalyst layer or is catalytically inactive, b) a gas stream is passed through the reactor with an initial loading of o-xylene and at an initial temperature of the heat transfer medium, c) the loading of the gas stream is increased to a target loading and, in parallel, the temperature of the heat transfer medium is lowered to an operating temperature. The introduction of the moderator layer allows the loading to be increased more rapidly and the startup time to be shortened.

Method for starting a gas-phase oxidation reactor

A process for gas phase oxidation in which a gaseous stream which comprises at least one aromatic hydrocarbon and molecular oxygen is passed through one or more catalyst layers, wherein a moderator layer is arranged between two catalyst layers arranged in succession in flow direction of the gaseous stream, the moderator layer being less catalytically active than the catalysts adjacent upstream and downstream or being catalytically inactive. The desired oxidation products are obtained in high yield over prolonged periods.

Method for gas phase oxidation using a moderator layer

A process for introducing annular coated catalysts K into a reaction tube of a tube bundle reactor, in which adhering pairs of annular coated catalysts K formed in the preparation of the annular coated catalysts K, before the introduction thereof into the reaction tube, are removed at least partly from the annular coated catalysts K.

Process for introducing a portion withdrawn from at least one production charge of annular coated catalysts K into a reaction tube of a tube bundle reactor

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Ludwigshafen, Germany

Hagen Wilmer