Exo Imaging, Inc.

Dell Products Inc.

Haesung Kwon

Sandeep Akkaraju

Brian Lee Bircumshaw

Kevin Warren Mundt

Frank Widjaja Yu

Austin Michael Shelnutt

Eric Michael Tunks

Yusuf Haque

Janusz Bryzek

Chandrashekar Nelogal

Bernard D Strmiska

Walter R Carver

David Michael Pereira

Walt R Carver

Jose A Nava

Naresh Mantravadi

Yusef Haque

Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.

Micro-machined ultrasound transducers with insulation layer and methods of manufacture

Disclosed herein are ultrasonic transducer systems with hybrid contacts comprising: an ultrasonic transducer element comprising a substrate and a membrane; an electrical circuitry; and one or more contacts connected to the ultrasonic transducer element and the electrical circuitry, wherein the one or more contacts are: designed geometrically using a set of rules; arranged with respect to the membrane based on the set of rules or a second set of rules, or both.

Systems and methods for integrating ultrasonic transducers with hybrid contacts

Disclosed herein are ultrasonic transducer systems comprising: an ultrasonic transducer comprising a substrate, a diaphragm, and a piezoelectric element; a first electrical circuitry coupled to the ultrasonic transducer, the first electrical circuitry configured for driving the ultrasonic transducer or detecting motion of the diaphragm; a plurality of electrical ports coupled to the ultrasonic transducer; and a second electrical circuitry connected to two or more of the plurality of electrical ports, the electrical circuitry comprising one or more of: a resistor, a capacitor, a switch, and an amplifier, wherein the second electrical circuitry is independent from the first electrical circuitry, and wherein the second electrical circuitry is configured to dampen the motion of the diaphragm.

Ultrasonic transducers with Q spoiling

An array of micromachined ultrasonic transducers (MUTs). The array has first and second rows, the MUTs in the first row being equally spaced by a horizontal pitch in a horizontal direction, the MUTs in the second row being equally spaced by the horizontal pitch in the horizontal direction. The MUTs in the second row are shifted along the horizontal direction by a first horizontal distance relative to the MUTs in the first row and shifted along a vertical direction by a first vertical distance relative to the MUTs in the first row. The first horizontal distance is greater than zero and less than the horizontal pitch. The first vertical distance ranges from one tenth of a horizontal width of a MUT to a half of a vertical height of a MUT.

Asymmetrical ultrasound transducer array

Methods for improving the electromechanical coupling coefficient and bandwidth of micromachined ultrasonic transducers, or MUTs, are presented as well as methods of manufacture of the MUTs improved by the presented methods.

Increased MUT coupling efficiency and bandwidth via edge groove, virtual pivots, and free boundaries

An imaging system includes: a transceiver cell for generating a pressure wave and converting an external pressure wave into an electrical signal; and a control unit for controlling an operation of the transceiver cell. The transceiver cell includes: a substrate; at least one membrane suspending from the substrate; and a plurality of transducer elements mounted on the at least one membrane. Each of the plurality of transducer elements has a bottom electrode, a piezoelectric layer on bottom electrode, and at least one top electrode on the piezoelectric layer. Each of the plurality of transducer element generates a bending moment in response to applying an electrical potential across the bottom electrode and the at least one top electrode and develops an electrical charge in response to a bending moment due to the external pressure wave.

Imaging devices having piezoelectric transducers

Described are micromachined ultrasonic transducers (MUTs) with convex or concave electrodes, which have enhanced pressure amplitude and frequency response behavior when driven at fundamental and harmonic frequencies, as well as methods of making the same.

Imaging devices having piezoelectric transceivers with harmonic characteristics

A micromachined ultrasonic transducer (MUT) which comprises a first piezoelectric layer and a second piezoelectric layer. The first piezoelectric layer is disposed between a first electrode and a second electrode. The second piezoelectric layer is disposed between the second electrode and a third electrode. At least the first electrode has first and second ends along a first axis, one or more of which is defined by a radius of curvature R. A second axis normal to the first passes through a midpoint of the first axis. A half-width of the first electrode is defined by a length L measured from the midpoint, in the direction of the second axis, to an outer perimeter of the first electrode. A total width of the first electrode at its narrowest point along the first axis is at most 2L such that the first electrode has a concave shape. R/L, is greater than 1.

A micromachined ultrasonic transducer (MUT). The MUT includes: a substrate; a membrane suspending from the substrate; a bottom electrode disposed on the membrane; a piezoelectric layer disposed on the bottom electrode and an asymmetric top electrode is disposed on the piezoelectric layer. The areal density distribution of the asymmetric electrode along an axis has a plurality of local maxima, wherein locations of the plurality of local maxima coincide with locations where a plurality of anti-nodal points at a vibrational resonance frequency is located.

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Austin, TX, United States of America

Haesung Kwon