Samsung Electronics Co., Ltd.

Haesick Sul

Yunhwan Jung

Sunyool Kang

Seung Hyun Lim

Heesung Chae

Yunhong Kim

Hyosang Kim

Minji Hwang

Kyung-Min Kim

Yongjun Cho

Hyeonji Lee

Jaeyoung Bae

Suyong Kim

Seungmin Suh

Kyungmin Kim

Mooyoung Kim

Sukki Yoon

An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

Image processing device for controlling pixel output level and operating method thereof

Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

Bandgap reference circuit using heterogeneous power and electronic device having the same

Provided are analog-digital converting circuits including a comparator, and an image sensor. The analog-digital converting circuit include a counter and a comparator, the comparator including a first P-type transistor including a gate connected to a first input node of the comparator, a second P-type transistor including a gate connected to a second input node of the comparator, a first N-type transistor including a gate connected to the first input node and a drain connected to the first P-type transistor, a second N-type transistor including a gate connected to the second input node and a drain connected to the second P-type transistor, and a transistor including a gate connected to the drain of the first N-type transistor and a source to which ground voltage or power supply voltage is applied.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

An image sensor may include a pixel array a pixel array including an active pixel and an optical black pixel, the active pixel configured to generate a first pixel signal, and the optical black pixel configured to generate a second pixel signal, a first biasing circuit configured to bias the first pixel signal based on a first bias voltage, a first analog-to-digital converter configured to convert the biased first pixel signal into a first digital signal, a second biasing circuit configured to bias the second pixel signal based on a second bias voltage, and a second analog-to-digital converter configured to convert the biased second pixel signal into a second digital signal, the second digital signal configured to generate smaller random noise than the first analog-to-digital converter.

Image sensor including pixel array

An image sensor for sampling a pixel signal a plurality of times during a readout time includes an analog comparator configured to compare a signal level of the pixel signal with a signal level of a target ramp signal that is any one of a plurality of ramp signals, a counter configured to output counting data based on a comparison result of the analog comparator, and a digital comparing circuit configured to compare a binary value of a target reference code corresponding to the target ramp signal with a binary value of the counting data and determine whether to output a digital signal corresponding to the counting data to a data output circuit based on a result of the comparison between the binary value of the counting data and the binary value of the target reference code.

Image sensor sampling pixel signal multiple times and an operating method of the image sensor

Bandgap reference circuit using heterogeneous power and electronic device having ihe same

An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.

Image sensor having reduced parasitic capacitance

Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

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Hwaseong-si, South Korea

Haesick Sul