Samsung Electronics Co., Ltd.

Haeseok Park

Jungwoo Kim

Seokho Yun

Sookyoung Roh

Won Tae Kim

Sunghyun Nam

Myounghoon Jung

Inyoung Lee

Chanho Lee

Sungdong Cho

Seungeon Ahn

Yongwoo Jeon

Hyungue Hong

Jinkuk Bae

Hyuksoon Choi

Seunghyup Lee

Ilgeun Jung

Jihoon Ahn

A semiconductor package may include a base, a first chip on the base, and first connection patterns that connect and couple the base and the first chip. The first chip may include a substrate, pad patterns on the substrate, a passivation layer on the substrate and having openings, and pillars on the substrate, the pad patterns include a first signal pad and a second signal pad, the first connection patterns are in contact with the pillars, the pillars include a first signal pillar in contact with the first signal pad and a second signal pillar in contact with the second signal pad, the openings in the passivation layer include a first opening having a sidewall facing a side surface of the first signal pillar and surrounding the side surface of the first signal pillar, and a second opening having a sidewall facing a side surface of the second signal pillar and surrounding the side surface of the second signal pillar, and a maximum width of the second opening is greater than a maximum width of the first opening.

Semiconductor packages

Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor

A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized.

Thermal radiation sensor and thermal image capturing device including same

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Yongin-si, South Korea

Haeseok Park