Samsung Electronics Co., Ltd.

Harvard College

Adeka Corporation

Haeryong Kim

Hyeonjin Shin

Jaeho Lee

Younsoo Kim

Sanghyun Jo

Jeonggyu Song

Kyooho Jung

Seongjun Park

Minhyun Lee

Jooho Lee

Seunggeol Nam

Jungmin Park

Donhee Ham

Sunmin Moon

Houk Jang

Yongsung Kim

Jinseong Heo

Yeonchoo Cho

Eunkyu Lee

Kiyoung Lee

Junghwa Kim

Younjoung Cho

Jinho Lee

Myoungho Jeong

Seungmin Ryu

Jeongil Bang

Chang-su Woo

Henry Julian Hinton

Changsu Woo

Dovran Amanov

Chengye Liu

Renjing Xu

Sunghyun Kim

Hyangsook Lee

Young-Geun Park

Hanjin Lim

Tsubasa Shiratori

Eunha Lee

Eunae Cho

Jaewoon Kim

Younggeun Park

Cheoljin Cho

Boeun Park

Yong-hee Cho

Younglim Park

A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.

Semiconductor device with capping conductive layer on an electrode and method of fabricating the same

A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.

Nonvolatile memory device and operating method of the same

An integrated circuit (IC) device includes a lower electrode including a first metal, a dielectric film on the lower electrode, and a conductive interface layer between the lower electrode and the dielectric film. The conductive interface layer includes a metal oxide film including at least one metal element. An upper electrode including a second metal is opposite the lower electrode, with the conductive interface layer and the dielectric film therebetween. To manufacture an IC device, an electrode including a metal is formed adjacent to an insulating pattern on a substrate. A conductive interface layer including a metal oxide film including at least one metal element is selectively formed on a surface of the electrode. A dielectric film is formed to be in contact with the conductive interface layer and the insulating pattern.

Integrated circuit devices and methods of manufacturing the same

A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

Avalanche photodetectors and image sensors including the same

A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

Semiconductor device including metal-2 dimensional material-semiconductor contact

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.

Memristor and neuromorphic device comprising the same

Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.

Methods of forming material layer, semiconductor devices, and methods of manufacturing the same

A capacitor includes: a lower electrode including a metal nitride represented by MM'N, wherein M is a metal element, M&#x2032; is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM&#x2032;ON, wherein M is a metal element, M&#x2032; is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

Integrated circuit device including capacitor with metal nitrate interfacial layer

A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABOwhere 'A' is a first metal element and 'B' is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDOwhere &#x2018;C&#x2019; is a third metal element and &#x2018;D&#x2019; is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.

Semiconductor device and method of manufacturing the same

Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen

An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.

Integrated circuit device

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Growing community of inventors

Seongnam-si, South Korea

Haeryong Kim