Dnf Co., Ltd.

Haeng Don Lim

Sang Ick Lee

Myong Woon Kim

Sang Yong Jeon

A Ra Cho

Won Mook Chae

Se Jin Jang

Sung Gi Kim

Joong Jin Park

Jeong Joo Park

Sam Dong Lee

Byeong Il Yang

Sung Woo Cho

Sang Jun Yim

Kang Yong Lee

Myoung Woon Kim

Gun Joo Park

Jang Woo Seo

Mi Jeong Han

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

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Daejeon, South Korea

Haeng Don Lim