Samsung Electronics Co., Ltd.

Yonsei University

Haeng Deog Koh

Hyun A Kang

Mi-Jeong Kim

Eun Joo Jang

In Taek Han

Seong-Jun Jeong

Youn Jung Park

Oul Cho

Nayoun Won

Tomoyuki Kikuchi

Na Youn Won

Eunjoo Jang

June Huh

A composition for an adhesion layer of a gas barrier adhesive sheet including a gas blocking film and an adhesion layer including at least one compound selected from a compound represented by Chemical Formula 1, at least one compound selected from a compound represented by Chemical Formula 2, and optionally, a compound represented by Chemical Formula 3. 

Composition for adhesion layer of gas barrier adhesive sheet, gas barrier adhesive sheet, and optical sheet having gas barrier adhesive sheet

A barrier coating composition including: a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and a plurality of organo-modified clay particles dispersed in the monomer combination, wherein the organo-modified clay particles include a compound having a hydrocarbyl group linked to a heteroatom, and wherein the compound is a primary, secondary, or tertiary amine, a quaternary organoammonium salt, a primary, secondary, or tertiary phosphine, a quaternary organophosphonium salt, a thiol including an amine group, or a combination thereof.

Barrier coating compositions, composites prepared therefrom, and quantum dot polymer composite articles including the same

A quantum dot-resin nanocomposite including a nanoparticle including a curable resin and a plurality of quantum dots contacting the nanoparticle. Also, a method of preparing the nanocomposite, and a molded article including the nanocomposite.

Quantum dot-resin nanocomposite and method of preparing same

A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r, and the inner apex having a second curvature radius r, respectively, and the width of the patterning area W, the first curvature radius rand the second curvature radius r, satisfy Inequation 1: 

Method of patterning block copolymer layer and patterned structure

A method of patterning a block copolymer layer, the method including:

Methods of patterning block copolymer layers and patterned structures

A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period &#x3bb;in the trench by the annealing.

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Hwaseong-si, South Korea

Haeng Deog Koh