Sungkyunkwan University

Haeju Choi

Sungjoo Lee

Sungpyo Baek

Jae Hyeok Ju

Taeho Kang

Chanwoo Kang

Hyeonje Son

Hyun Ho Yoo

Disclosed are a negative transconductance device and a multi-valued memory device using the same. The negative transconductance includes a monolithic WSesemiconductor thin film; a first doped layer disposed on a first area of the WSesemiconductor thin film; a second doped layer disposed on a second area of the WSesemiconductor thin film so as to supply holes to the second area, wherein the second area is spaced apart from the first area; a first electrode electrically connected to the first area of the WSesemiconductor thin film; a second electrode electrically connected to the second area of the WSesemiconductor thin film; and a third electrode for applying a gate voltage to the first area and the second area of the WSesemiconductor thin film, and to a third area thereof located between the first and second areas.

Multi-valued memory device based on negative transconductance using monolithic WSe2 thin film

Growing community of inventors

Suwon-si, South Korea

Haeju Choi