Samsung Electronics Co., Ltd.

Haegeon Jung

Jongchul Park

Dohyoung Kim

Jinwook Lee

Jeongyun Lee

Dongwoo Han

Kwang-Yong Yang

Jongsoon Park

Kyungyub Jeon

Hyunggoo Lee

Yeondo Jung

Bokyoung Lee

Cheol Kyu Kim

Sujin Jung

Choeun Lee

Yang Xu

Jin Bum Kim

Yong-Joon Choi

GeumJung Seong

Kang Hun Moon

Kyung Yub Jeon

Hak-Sun Lee

Myeongcheol Kim

Ji-Eun Han

A semiconductor device includes a device isolation layer on a substrate; pattern groups including fin patterns extending in a first direction; and gate structures extending in a second direction to intersect the fin patterns. A first pattern group, among the pattern groups, may include first fin patterns. At least a portion of the first fin patterns may be arranged with a first pitch in the second direction. The first pattern group may include a first planar portion extending from a first recess portion. A central axis of the first recess portion may be spaced apart from a central axis of one of the first fin patterns by a first distance in the second direction. The first planar portion may have a first width in the second direction and being greater than the first pitch. The first distance may be about 0.8 times to about 1.2 times the first pitch.

Semiconductor devices and method of manufacturing the same

A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

Semiconductor device, method of fabricating the same, and patterning method

A method of fabricating a semiconductor device is disclosed. The method includes forming an active pattern protruding orthogonally from a substrate; forming a preliminary gate structure on the active pattern to cross the active pattern; etching the active pattern to form preliminary recess regions at both sides of the preliminary gate structure, wherein each of the preliminary recess regions is formed to define a delta region in an upper portion of the active pattern; forming a sacrificial layer on inner side surfaces and a bottom surface of the active pattern exposed by each of the preliminary recess regions; etching the delta regions and the sacrificial layer to form recess regions having a 'U'-shaped section; and forming source/drain regions in the recess regions.

Method of fabricating semiconductor device

The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.

Semiconductor device, electronic device including the same and manufacturing methods thereof

Growing community of inventors

Yongin-si, South Korea

Haegeon Jung