Cree Gmbh

Wolfspeed, Inc.

Infineon Technologies Ag

Macom Technology Solutions Holdings, Inc.

Infineon Technologies Americas Corp.

Haedong Jang

Richard Wilson

Frank Trang

Zulhazmi Mokhti

Timothy Canning

Bayaner Arigong

Qianli Mu

David Seebacher

Marvin Marbell

Madhu Chidurala

Bjoern Herrmann

Rongguo Zhou

Jeremy Fisher

Christian Schuberth

Basim H Noori

Saurabh Goel

Simon Ward

Alexander Komposch

Peter Singerl

Eng Wah Woo

Michael Lefevre

Kok Meng Kam

E J Hashimoto

Sonoko Aristud

Jonathan Chang

Björn Herrmann

Tim Canning

Ej Hashimoto

Samantha Cheang

Marvin Mabell

A component includes a substrate board; a thermal bridge structured and arranged on the substrate board, where the thermal bridge is configured to transfer heat from the substrate board including an area adjacent to or on a hotspot of the substrate board; where the thermal bridge is configured to transfer the heat to another location on the substrate board for removal of the heat from the substrate board; and where the thermal bridge may include silicon carbide.

Silicon carbide thermal bridge integrated on a low thermal conductivity substrate and processes implementing the same

A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.

Multi-typed integrated passive device (IPD) components and devices and processes implementing the same

A radio frequency (RF) package includes a support having a semiconductor die attach region; a frame that includes an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame includes an opening at least partially registered with said semiconductor die attach region; and the frame includes an upper metallization at the upper side of the electrically insulative member and a lower metallization The frame includes first electrically conductive edge connection connecting the first metallization to the first lower metallization.

Radio frequency package implementing a window frame with edge plating and processes of implementing the same

A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and the drain finger.

High power transistor with interior-fed fingers

A power amplifier includes a semiconductor die having a main amplifier and a peaking amplifier. The main amplifier includes at least one first transistor, and the peaking amplifier includes at least one second transistor that is different than the first transistor. The peaking amplifier is configured to modulate a load impedance of the main amplifier responsive to a common gate bias applied to respective gates of the first and second transistors. Related fabrication and methods of operation are also discussed.

In-transistor load modulation

A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

Integrated passive device (IPD) components and a package and processes implementing the same

A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

Output-integrated transistor amplifier device packages incorporating internal connections

Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a drain finger extending on the semiconductor structure in a first direction, and a drain interconnect extending in the first direction and configured to be coupled to a drain signal at an interior position of the drain interconnect, where the drain interconnect is connected to the drain finger at a position offset from the interior position of the drain interconnect.

Drain and/or gate interconnect and finger structure

A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures

A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

Radio frequency transistor amplifiers having leadframes with integrated shunt inductors and/or direct current voltage source inputs

Inductance-capacitance (LC) resonators having different resonant frequencies, and radio frequency (RF) transistor amplifiers including the same. One usage of such LC resonators is to implement RF short/DC block circuits. A RF transistor amplifier may include a transistor on a base of the RF transistor amplifier coupled to an input and an output of the RF transistor amplifier; a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and a second LC resonator comprising a second inductance and a second capacitance. The first LC resonator may be configured to resonate at a first frequency, and the second LC resonator may be configured to resonate at a second frequency different from the first frequency.

Wideband RF short/DC block circuit for RF devices and applications

Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.

A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and/or the drain bond pad extends on the drain finger.

Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is and physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.

Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation

An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

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San Jose, CA, United States of America

Haedong Jang